### Abstract

A method is proposed to generate a square-shaped temperature distribution in substrates from a Gaussian-shaped laser source by transferring the Gaussian distribution of the laser beam into four one-quarter Gaussian-distributed beams. A mathematical model was derived to calculate the temperature rise induced by both the one-quarter Gaussian beam and four one-quarter Gaussian beams. The model was then applied to a silicon substrate. It is revealed that square-shaped temperature distributions can be obtained by this method if the distance between the peaks of the four one-quarter beams is arranged to be the same as the spot size of the original Gaussian beam. It is also found that the square shape of the temperature profile is almost of the same size as the original Gaussian beam and does not depend on the incident laser power (or the absolute temperature rise) and the substrate material.

Original language | English (US) |
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Pages (from-to) | 357-364 |

Number of pages | 8 |

Journal | Applied Surface Science |

Volume | 81 |

Issue number | 3 |

DOIs | |

State | Published - Nov 1994 |

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### ASJC Scopus subject areas

- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films

### Cite this

**Square-shaped temperature distribution induced by a Gaussian-shaped laser beam.** / Lu, Yong Feng.

Research output: Contribution to journal › Article

*Applied Surface Science*, vol. 81, no. 3, pp. 357-364. https://doi.org/10.1016/0169-4332(94)90294-1

}

TY - JOUR

T1 - Square-shaped temperature distribution induced by a Gaussian-shaped laser beam

AU - Lu, Yong Feng

PY - 1994/11

Y1 - 1994/11

N2 - A method is proposed to generate a square-shaped temperature distribution in substrates from a Gaussian-shaped laser source by transferring the Gaussian distribution of the laser beam into four one-quarter Gaussian-distributed beams. A mathematical model was derived to calculate the temperature rise induced by both the one-quarter Gaussian beam and four one-quarter Gaussian beams. The model was then applied to a silicon substrate. It is revealed that square-shaped temperature distributions can be obtained by this method if the distance between the peaks of the four one-quarter beams is arranged to be the same as the spot size of the original Gaussian beam. It is also found that the square shape of the temperature profile is almost of the same size as the original Gaussian beam and does not depend on the incident laser power (or the absolute temperature rise) and the substrate material.

AB - A method is proposed to generate a square-shaped temperature distribution in substrates from a Gaussian-shaped laser source by transferring the Gaussian distribution of the laser beam into four one-quarter Gaussian-distributed beams. A mathematical model was derived to calculate the temperature rise induced by both the one-quarter Gaussian beam and four one-quarter Gaussian beams. The model was then applied to a silicon substrate. It is revealed that square-shaped temperature distributions can be obtained by this method if the distance between the peaks of the four one-quarter beams is arranged to be the same as the spot size of the original Gaussian beam. It is also found that the square shape of the temperature profile is almost of the same size as the original Gaussian beam and does not depend on the incident laser power (or the absolute temperature rise) and the substrate material.

UR - http://www.scopus.com/inward/record.url?scp=0028548729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028548729&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(94)90294-1

DO - 10.1016/0169-4332(94)90294-1

M3 - Article

AN - SCOPUS:0028548729

VL - 81

SP - 357

EP - 364

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 3

ER -