Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

Soon Young Jeong, Sung Bong Kim, Sang In Kim, Z. S. Shan, David J Sellmyer

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

Original languageEnglish (US)
Pages (from-to)5145-5148
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number8
StatePublished - Aug 1 2002
Externally publishedYes

Fingerprint

magnetic switching
Magnetization reversal
Pressure effects
pressure effects
Sputtering
sputtering
magnetization
Magnetic recording
magnetic recording
Thermodynamic stability
thermal stability
low pressure
requirements

Keywords

  • CoSm film
  • Irreversible susceptibility
  • Magnetic viscosity
  • Magnetization reversal mechanism
  • Switching volume
  • dc magnetron sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films. / Jeong, Soon Young; Kim, Sung Bong; Kim, Sang In; Shan, Z. S.; Sellmyer, David J.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 8, 01.08.2002, p. 5145-5148.

Research output: Contribution to journalArticle

@article{7b619fb9608049f483a311145a2365e3,
title = "Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films",
abstract = "The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.",
keywords = "CoSm film, Irreversible susceptibility, Magnetic viscosity, Magnetization reversal mechanism, Switching volume, dc magnetron sputtering",
author = "Jeong, {Soon Young} and Kim, {Sung Bong} and Kim, {Sang In} and Shan, {Z. S.} and Sellmyer, {David J}",
year = "2002",
month = "8",
day = "1",
language = "English (US)",
volume = "41",
pages = "5145--5148",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8",

}

TY - JOUR

T1 - Sputtering pressure effects on magnetization reversal mechanism and magnetic switching volumes of CoSm/Cr films

AU - Jeong, Soon Young

AU - Kim, Sung Bong

AU - Kim, Sang In

AU - Shan, Z. S.

AU - Sellmyer, David J

PY - 2002/8/1

Y1 - 2002/8/1

N2 - The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

AB - The sputtering pressure effects on magnetization reversal and magnetic switching volumes of CoSm/Cr films have been investigated. It is found that the magnetization reversal changed from wall pinning for samples prepared at low pressure to single particle rotation for samples prepared at high pressure. The magnetic switching volumes increased with increasing the Ar pressure to values in the range of 5.2-9.0 × 10-18 cm3. These switching volumes satisfy Sharrock's requirement for the thermal stability of high-density magnetic recording.

KW - CoSm film

KW - Irreversible susceptibility

KW - Magnetic viscosity

KW - Magnetization reversal mechanism

KW - Switching volume

KW - dc magnetron sputtering

UR - http://www.scopus.com/inward/record.url?scp=0036697539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036697539&partnerID=8YFLogxK

M3 - Article

VL - 41

SP - 5145

EP - 5148

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

ER -