Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers

Ping He, William A. McGahan, S. Nafis, John A Woollam, Z. S. Shan, Sy-Hwang Liou, F. Sequeda, T. McDaniel, H. Do

Research output: Contribution to journalArticle

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Abstract

Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.

Original languageEnglish (US)
Pages (from-to)6044-6046
Number of pages3
JournalJournal of Applied Physics
Volume70
Issue number10
DOIs
StatePublished - Dec 1 1991

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pressure effects
coercivity
sputtering
microstructure
magnetometers
ellipsometry
surface roughness
x ray diffraction
atomic force microscopy
magnetization
glass
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers. / He, Ping; McGahan, William A.; Nafis, S.; Woollam, John A; Shan, Z. S.; Liou, Sy-Hwang; Sequeda, F.; McDaniel, T.; Do, H.

In: Journal of Applied Physics, Vol. 70, No. 10, 01.12.1991, p. 6044-6046.

Research output: Contribution to journalArticle

He, Ping ; McGahan, William A. ; Nafis, S. ; Woollam, John A ; Shan, Z. S. ; Liou, Sy-Hwang ; Sequeda, F. ; McDaniel, T. ; Do, H. / Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers. In: Journal of Applied Physics. 1991 ; Vol. 70, No. 10. pp. 6044-6046.
@article{51864d11847c419f8789ce121a66aec8,
title = "Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers",
abstract = "Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 {\AA})/Pt(15 {\AA})×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.",
author = "Ping He and McGahan, {William A.} and S. Nafis and Woollam, {John A} and Shan, {Z. S.} and Sy-Hwang Liou and F. Sequeda and T. McDaniel and H. Do",
year = "1991",
month = "12",
day = "1",
doi = "10.1063/1.350066",
language = "English (US)",
volume = "70",
pages = "6044--6046",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers

AU - He, Ping

AU - McGahan, William A.

AU - Nafis, S.

AU - Woollam, John A

AU - Shan, Z. S.

AU - Liou, Sy-Hwang

AU - Sequeda, F.

AU - McDaniel, T.

AU - Do, H.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.

AB - Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.

UR - http://www.scopus.com/inward/record.url?scp=0242402638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242402638&partnerID=8YFLogxK

U2 - 10.1063/1.350066

DO - 10.1063/1.350066

M3 - Article

VL - 70

SP - 6044

EP - 6046

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -