Spectroscopic mapping ellipsometry of graphene grown on 3C SiC

Alexander Boosalis, Tino Hofmann, Vanya Darakchieva, Rositza Yakimova, Tom Tiwald, Mathias Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Original languageEnglish (US)
Title of host publicationCarbon Nanotubes, Graphene and Related Nanostructures
Pages47-51
Number of pages5
DOIs
StatePublished - Dec 5 2012
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1407
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/2/11

Fingerprint

Graphite
Ellipsometry
visible spectrum
Charge carriers
Graphene
ellipsometry
charge carriers
graphene
trucks
Excitons
excitons
oscillators
Scattering
scattering
LDS 751

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Boosalis, A., Hofmann, T., Darakchieva, V., Yakimova, R., Tiwald, T., & Schubert, M. (2012). Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. In Carbon Nanotubes, Graphene and Related Nanostructures (pp. 47-51). (Materials Research Society Symposium Proceedings; Vol. 1407). https://doi.org/10.1557/opl.2012.457

Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. / Boosalis, Alexander; Hofmann, Tino; Darakchieva, Vanya; Yakimova, Rositza; Tiwald, Tom; Schubert, Mathias.

Carbon Nanotubes, Graphene and Related Nanostructures. 2012. p. 47-51 (Materials Research Society Symposium Proceedings; Vol. 1407).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Boosalis, A, Hofmann, T, Darakchieva, V, Yakimova, R, Tiwald, T & Schubert, M 2012, Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. in Carbon Nanotubes, Graphene and Related Nanostructures. Materials Research Society Symposium Proceedings, vol. 1407, pp. 47-51, 2011 MRS Fall Meeting, Boston, MA, United States, 11/28/11. https://doi.org/10.1557/opl.2012.457
Boosalis A, Hofmann T, Darakchieva V, Yakimova R, Tiwald T, Schubert M. Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. In Carbon Nanotubes, Graphene and Related Nanostructures. 2012. p. 47-51. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2012.457
Boosalis, Alexander ; Hofmann, Tino ; Darakchieva, Vanya ; Yakimova, Rositza ; Tiwald, Tom ; Schubert, Mathias. / Spectroscopic mapping ellipsometry of graphene grown on 3C SiC. Carbon Nanotubes, Graphene and Related Nanostructures. 2012. pp. 47-51 (Materials Research Society Symposium Proceedings).
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