Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Huade Yao, John A. Woollam, Samuel A. Alterovitz

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to ∼550°C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Original languageEnglish (US)
Pages (from-to)3324-3326
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number25
DOIs
StatePublished - Dec 1 1993

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ellipsometry
hydrogen
vacuum chambers
ultrahigh vacuum
cleaning
passivity
surface layers
surface roughness
roughness
desorption

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces. / Yao, Huade; Woollam, John A.; Alterovitz, Samuel A.

In: Applied Physics Letters, Vol. 62, No. 25, 01.12.1993, p. 3324-3326.

Research output: Contribution to journalArticle

Yao, Huade ; Woollam, John A. ; Alterovitz, Samuel A. / Spectroscopic ellipsometry studies of HF treated Si (100) surfaces. In: Applied Physics Letters. 1993 ; Vol. 62, No. 25. pp. 3324-3326.
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