Single electron transistor in aqueous media

Chichao Yu, Seung Woo Lee, Jason Ong, David Moore, Ravi F Saraf

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based electrochemical transistors.

Original languageEnglish (US)
Pages (from-to)3079-3084
Number of pages6
JournalAdvanced Materials
Volume25
Issue number22
DOIs
StatePublished - Jun 11 2013

Fingerprint

Single electron transistors
Coulomb blockade
Nanostructured materials
Gold
Transistors
Nanoparticles
Air
Temperature

Keywords

  • Au nanoparticle
  • Single electron transistor
  • coulomb blockade
  • electrochemical FET
  • granular material
  • nanoparticle array
  • single electron device

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Single electron transistor in aqueous media. / Yu, Chichao; Lee, Seung Woo; Ong, Jason; Moore, David; Saraf, Ravi F.

In: Advanced Materials, Vol. 25, No. 22, 11.06.2013, p. 3079-3084.

Research output: Contribution to journalArticle

Yu, C, Lee, SW, Ong, J, Moore, D & Saraf, RF 2013, 'Single electron transistor in aqueous media', Advanced Materials, vol. 25, no. 22, pp. 3079-3084. https://doi.org/10.1002/adma.201204162
Yu, Chichao ; Lee, Seung Woo ; Ong, Jason ; Moore, David ; Saraf, Ravi F. / Single electron transistor in aqueous media. In: Advanced Materials. 2013 ; Vol. 25, No. 22. pp. 3079-3084.
@article{fececdf4b1544dbfb45bfa3a16b7fa42,
title = "Single electron transistor in aqueous media",
abstract = "A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based electrochemical transistors.",
keywords = "Au nanoparticle, Single electron transistor, coulomb blockade, electrochemical FET, granular material, nanoparticle array, single electron device",
author = "Chichao Yu and Lee, {Seung Woo} and Jason Ong and David Moore and Saraf, {Ravi F}",
year = "2013",
month = "6",
day = "11",
doi = "10.1002/adma.201204162",
language = "English (US)",
volume = "25",
pages = "3079--3084",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "22",

}

TY - JOUR

T1 - Single electron transistor in aqueous media

AU - Yu, Chichao

AU - Lee, Seung Woo

AU - Ong, Jason

AU - Moore, David

AU - Saraf, Ravi F

PY - 2013/6/11

Y1 - 2013/6/11

N2 - A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based electrochemical transistors.

AB - A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based electrochemical transistors.

KW - Au nanoparticle

KW - Single electron transistor

KW - coulomb blockade

KW - electrochemical FET

KW - granular material

KW - nanoparticle array

KW - single electron device

UR - http://www.scopus.com/inward/record.url?scp=84878829875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878829875&partnerID=8YFLogxK

U2 - 10.1002/adma.201204162

DO - 10.1002/adma.201204162

M3 - Article

C2 - 23653239

AN - SCOPUS:84878829875

VL - 25

SP - 3079

EP - 3084

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 22

ER -