Silicon-on-Insulator Optical Rib Waveguide Loss and Mode Characteristics

A. G. Rickman, G. T. Reed, Fereydoon Namavar

Research output: Contribution to journalArticle

140 Citations (Scopus)

Abstract

Optical rib waveguides with rib heights of 3.17 and 7.67 microns with various widths have been formed in separation by implantation of oxygen (SIMOX) based silicon-on-insulator (SOI) structures. The effect of waveguide rib etch depth, width, and interface roughness on loss and mode characteristics have been studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single mode SOI waveguides even though planar SOI waveguides of similar multimicron dimension are not single mode. Mode loss was found to be strongly dependent on interface roughness and mode confinement. 0733-8724/94#04.00

Original languageEnglish (US)
Pages (from-to)1771-1776
Number of pages6
JournalJournal of Lightwave Technology
Volume12
Issue number10
DOIs
StatePublished - Oct 1994

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insulators
waveguides
silicon
roughness
implantation
oxygen
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Silicon-on-Insulator Optical Rib Waveguide Loss and Mode Characteristics. / Rickman, A. G.; Reed, G. T.; Namavar, Fereydoon.

In: Journal of Lightwave Technology, Vol. 12, No. 10, 10.1994, p. 1771-1776.

Research output: Contribution to journalArticle

Rickman, A. G. ; Reed, G. T. ; Namavar, Fereydoon. / Silicon-on-Insulator Optical Rib Waveguide Loss and Mode Characteristics. In: Journal of Lightwave Technology. 1994 ; Vol. 12, No. 10. pp. 1771-1776.
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