Silicon nanostructures in Si-based light-emitting devices

Fereydoon Namavar, R. F. Pinizzotto, H. Yang, N. Kalkhoran, P. Maruska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherPubl by Materials Research Society
Pages343-348
Number of pages6
ISBN (Print)1558991948
Publication statusPublished - Dec 1 1993
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period4/12/934/14/93

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Namavar, F., Pinizzotto, R. F., Yang, H., Kalkhoran, N., & Maruska, P. (1993). Silicon nanostructures in Si-based light-emitting devices. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 343-348). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.