Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, H. Hu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O 2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiO x increases with increasing O 2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O 2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiO x/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

Original languageEnglish (US)
Pages (from-to)87-92
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume762
StatePublished - Dec 1 2003
EventMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

Fingerprint

Noble Gases
Silicon
Pulsed laser deposition
Inert gases
silicon films
pulsed laser deposition
rare gases
Gases
gases
Photoluminescence
photoluminescence
gas pressure
Lasers
fluence
Annealing
damage
Quantum confinement
laser annealing
Light emission
Surface states

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas. / Chen, X. Y.; Lu, Y. F.; Wu, Y. H.; Cho, B. J.; Hu, H.

In: Materials Research Society Symposium - Proceedings, Vol. 762, 01.12.2003, p. 87-92.

Research output: Contribution to journalConference article

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AU - Cho, B. J.

AU - Hu, H.

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N2 - We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O 2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiO x increases with increasing O 2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O 2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiO x/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

AB - We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O 2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 m Torr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiO x increases with increasing O 2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O 2 gas, almost complete SiO 2 structure is formed. The PL at 1.8-2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiO x/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

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