Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon

Zhengquan Tan, F. Namavar, J. I. Budnick, F. H. Sanchez, A. Fasihuddin, S. M. Heald, C. E. Bouldin, J. C. Woicik

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon have been studied with use of extended x-ray-absorption fine-structure, x-ray-diffraction, and Rutherford backscattering spectrometry. Si(100) wafers were implanted at elevated temperatures, typically 350 °C, to doses ranging from 1×1016 to 1×1018 ions/cm2. In the Co-implanted system, CoSi2 forms with doses as low as 1×1016 Co/cm2 and up to 3×1017 Co/cm2, where the CoSi phase starts to form. At higher doses (8×1017 Co/cm2), ordered CoSi and a CoSi-like short-range-ordered phase coexist. The silicide formation observed in the Ni-implanted system is similar to that in the cobalt-implanted system. In the case of iron implantation, Fe is coordinated with about eight Si atoms in the (1-3)×1017 Fe/cm2 range as in the tetragonal FeSi2. However, the FeSi2 phase forms only at around 5×1017 Fe/cm2. At even higher doses, a substantial amount of iron is in disordered states in addition to the ordered FeSi phase. Upon annealing at 900 °C, semiconducting β-FeSi2 forms in all the Fe-implanted samples independent of the dose. Mechanisms for silicide formation in these ion-implanted systems are discussed with respect to crystal structure, diffusion, and implantation damage.

Original languageEnglish (US)
Pages (from-to)4077-4085
Number of pages9
JournalPhysical Review B
Volume46
Issue number7
DOIs
StatePublished - Jan 1 1992

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Silicon
Iron
Ions
X rays
dosage
Rutherford backscattering spectroscopy
silicon
Cobalt
Spectrometry
Diffraction
Crystal structure
Annealing
implantation
Atoms
iron
x ray absorption
backscattering
ions
x ray diffraction
cobalt

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Tan, Z., Namavar, F., Budnick, J. I., Sanchez, F. H., Fasihuddin, A., Heald, S. M., ... Woicik, J. C. (1992). Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon. Physical Review B, 46(7), 4077-4085. https://doi.org/10.1103/PhysRevB.46.4077

Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon. / Tan, Zhengquan; Namavar, F.; Budnick, J. I.; Sanchez, F. H.; Fasihuddin, A.; Heald, S. M.; Bouldin, C. E.; Woicik, J. C.

In: Physical Review B, Vol. 46, No. 7, 01.01.1992, p. 4077-4085.

Research output: Contribution to journalArticle

Tan, Z, Namavar, F, Budnick, JI, Sanchez, FH, Fasihuddin, A, Heald, SM, Bouldin, CE & Woicik, JC 1992, 'Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon', Physical Review B, vol. 46, no. 7, pp. 4077-4085. https://doi.org/10.1103/PhysRevB.46.4077
Tan Z, Namavar F, Budnick JI, Sanchez FH, Fasihuddin A, Heald SM et al. Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon. Physical Review B. 1992 Jan 1;46(7):4077-4085. https://doi.org/10.1103/PhysRevB.46.4077
Tan, Zhengquan ; Namavar, F. ; Budnick, J. I. ; Sanchez, F. H. ; Fasihuddin, A. ; Heald, S. M. ; Bouldin, C. E. ; Woicik, J. C. / Silicide formation and structural evolution in Fe-, Co-, and Ni-implanted silicon. In: Physical Review B. 1992 ; Vol. 46, No. 7. pp. 4077-4085.
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