Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

G. R. Hyde, R. O. Dillon, H. A. Beale, I. L. Spain, J. A. Woollam, David J. Sellmyer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi2Se3 having a higher carrier density (∼9 × 1025m-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m0) found for these carrier concentrations indicates that the band is non-parabolic.

Original languageEnglish (US)
Pages (from-to)257-263
Number of pages7
JournalSolid State Communications
Volume13
Issue number3
DOIs
StatePublished - Aug 1 1973

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Shubnikov-de Haas effect
Carrier concentration
Fermi surface
Conduction bands
Brillouin zones
Fermi surfaces
conduction bands

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations. / Hyde, G. R.; Dillon, R. O.; Beale, H. A.; Spain, I. L.; Woollam, J. A.; Sellmyer, David J.

In: Solid State Communications, Vol. 13, No. 3, 01.08.1973, p. 257-263.

Research output: Contribution to journalArticle

Hyde, G. R. ; Dillon, R. O. ; Beale, H. A. ; Spain, I. L. ; Woollam, J. A. ; Sellmyer, David J. / Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations. In: Solid State Communications. 1973 ; Vol. 13, No. 3. pp. 257-263.
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