Self-organization in porous 6H-SiC

S. Zangooie, John A Woollam, H. Arwin

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Pores in porous 6H–SiC were found to propagate first nearly parallel with the basal plane and gradually change direction and align with the c axis. As a consequence, well-defined columnar pores were formed. It was shown that the rate of change of propagation directions was influenced by the etching parameters, such as hydrofluoric acid concentration and current density. Larger currents resulted in formation of larger pores. Pore sizes were found to increase with depth due to a decrease of the acid concentration. In addition, due to chemical etching effects, larger pore sizes were obtained close to the sample surface.

Original languageEnglish (US)
Pages (from-to)1860-1863
Number of pages4
JournalJournal of Materials Research
Volume15
Issue number9
DOIs
StatePublished - Jan 1 2000

Fingerprint

Pore size
Etching
Hydrofluoric Acid
porosity
Hydrofluoric acid
Current density
Acids
etching
hydrofluoric acid
Direction compound
current density
acids
propagation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Self-organization in porous 6H-SiC. / Zangooie, S.; Woollam, John A; Arwin, H.

In: Journal of Materials Research, Vol. 15, No. 9, 01.01.2000, p. 1860-1863.

Research output: Contribution to journalArticle

Zangooie, S. ; Woollam, John A ; Arwin, H. / Self-organization in porous 6H-SiC. In: Journal of Materials Research. 2000 ; Vol. 15, No. 9. pp. 1860-1863.
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