Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu, Wu Wang, Qingyi Shao, Dongning Zhao, Yongfeng Lu, Natale Ianno

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

Original languageEnglish (US)
Article number173110
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
StatePublished - Apr 25 2011

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tunnel diodes
germanium
valleys
lithography
diodes
atomic force microscopy
electric potential
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes. / Zhu, Kaigui; Wang, Wu; Shao, Qingyi; Zhao, Dongning; Lu, Yongfeng; Ianno, Natale.

In: Applied Physics Letters, Vol. 98, No. 17, 173110, 25.04.2011.

Research output: Contribution to journalArticle

Zhu, Kaigui ; Wang, Wu ; Shao, Qingyi ; Zhao, Dongning ; Lu, Yongfeng ; Ianno, Natale. / Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes. In: Applied Physics Letters. 2011 ; Vol. 98, No. 17.
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