Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu, Wu Wang, Qingyi Shao, Dongning Zhao, Yongfeng Lu, Natale Ianno

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We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

Original languageEnglish (US)
Article number173110
JournalApplied Physics Letters
Issue number17
Publication statusPublished - Apr 25 2011


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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