We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)