Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces

Yongfeng Lu, Z. H. Mai, W. D. Song, W. K. Chim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Scanning tunnelling microscopy (STM) study and modification of hydrogen (H)-passivated Ge(100) surfaces have been investigated. Thermal oxidation procedures were used to minimise surface roughness. Ge samples were passivated in HF solution after thermal oxidation. STM and atomic force microscope (AFM) imaging showed that, using HF etching after thermal oxidation, we can obtain a natural H-passivated topographically and chemically flat Ge(100) surface. The root-mean-square (rms) roughness of a H-passivated Ge(100) surface measured both by STM and AFM is less than 2 angstrom. Electric properties of H-passivated Ge(100) surfaces were studied by scanning tunnelling spectroscopy (STS) in nitrogen ambient. STS showed that the H-passivated Ge surfaces were not pinned. Modification on H-passivated Ge(100) surfaces was carried out using STM by applying an electric voltage between the sample and tip in air. Modified features were characterised by STM and AFM imaging. On the H-passivated Ge(100) surfaces, stable, low-voltage, nanometer-scale modified features can be produced.

Original languageEnglish (US)
Pages (from-to)403-406
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number4
DOIs
StatePublished - Apr 1 2000

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Scanning tunneling microscopy
scanning tunneling microscopy
Hydrogen
Imaging techniques
hydrogen
Microscopes
microscopes
Oxidation
oxidation
Surface roughness
Spectroscopy
Scanning
scanning
Electric potential
low voltage
spectroscopy
Etching
surface roughness
Electric properties
Nitrogen

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces. / Lu, Yongfeng; Mai, Z. H.; Song, W. D.; Chim, W. K.

In: Applied Physics A: Materials Science and Processing, Vol. 70, No. 4, 01.04.2000, p. 403-406.

Research output: Contribution to journalArticle

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