Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon

G. B. Amisola, R. Behrensmeier, J. M. Galligan, F. A. Otter, Fereydoon Namavar, N. M. Kalkoran

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Atomic force microscope and scanning tunneling microscope images of photoluminescent anodically etched porous silicon are presented and the development of the porous structure due to different etching stages is investigated. These measurements show that the vertical surface roughness increases with etching while the lateral dimensions remain almost constant, in agreement with known etching models. In addition, the results give strong evidence for an amorphous surface layer that partially covers the porous structure. Tunneling spectroscopy of porous silicon and unetched silicon are also presented. The surface density of states (DOS) measurements of porous silicon are compared with its photoluminescence spectrum. The DOS measurements do not show a peak corresponding to the 1.8 eV photoluminescent peak energy nor do they show an increase in the band gap energy of porous silicon compared with crystalline silicon. However, these measurements do show that while the unetched silicon surface remains p type, the porous silicon surface behaves like an n-type material.

Original languageEnglish (US)
Pages (from-to)2595-2597
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number21
DOIs
StatePublished - Dec 1 1992

Fingerprint

porous silicon
microscopy
scanning
probes
spectroscopy
etching
silicon
microscopes
surface layers
surface roughness
photoluminescence
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Amisola, G. B., Behrensmeier, R., Galligan, J. M., Otter, F. A., Namavar, F., & Kalkoran, N. M. (1992). Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon. Applied Physics Letters, 61(21), 2595-2597. https://doi.org/10.1063/1.108138

Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon. / Amisola, G. B.; Behrensmeier, R.; Galligan, J. M.; Otter, F. A.; Namavar, Fereydoon; Kalkoran, N. M.

In: Applied Physics Letters, Vol. 61, No. 21, 01.12.1992, p. 2595-2597.

Research output: Contribution to journalArticle

Amisola, GB, Behrensmeier, R, Galligan, JM, Otter, FA, Namavar, F & Kalkoran, NM 1992, 'Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon', Applied Physics Letters, vol. 61, no. 21, pp. 2595-2597. https://doi.org/10.1063/1.108138
Amisola GB, Behrensmeier R, Galligan JM, Otter FA, Namavar F, Kalkoran NM. Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon. Applied Physics Letters. 1992 Dec 1;61(21):2595-2597. https://doi.org/10.1063/1.108138
Amisola, G. B. ; Behrensmeier, R. ; Galligan, J. M. ; Otter, F. A. ; Namavar, Fereydoon ; Kalkoran, N. M. / Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon. In: Applied Physics Letters. 1992 ; Vol. 61, No. 21. pp. 2595-2597.
@article{878b689d711e442b8ccd6fb1b82e509f,
title = "Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon",
abstract = "Atomic force microscope and scanning tunneling microscope images of photoluminescent anodically etched porous silicon are presented and the development of the porous structure due to different etching stages is investigated. These measurements show that the vertical surface roughness increases with etching while the lateral dimensions remain almost constant, in agreement with known etching models. In addition, the results give strong evidence for an amorphous surface layer that partially covers the porous structure. Tunneling spectroscopy of porous silicon and unetched silicon are also presented. The surface density of states (DOS) measurements of porous silicon are compared with its photoluminescence spectrum. The DOS measurements do not show a peak corresponding to the 1.8 eV photoluminescent peak energy nor do they show an increase in the band gap energy of porous silicon compared with crystalline silicon. However, these measurements do show that while the unetched silicon surface remains p type, the porous silicon surface behaves like an n-type material.",
author = "Amisola, {G. B.} and R. Behrensmeier and Galligan, {J. M.} and Otter, {F. A.} and Fereydoon Namavar and Kalkoran, {N. M.}",
year = "1992",
month = "12",
day = "1",
doi = "10.1063/1.108138",
language = "English (US)",
volume = "61",
pages = "2595--2597",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Scanning probe microscopy and scanning tunneling spectroscopy of porous silicon

AU - Amisola, G. B.

AU - Behrensmeier, R.

AU - Galligan, J. M.

AU - Otter, F. A.

AU - Namavar, Fereydoon

AU - Kalkoran, N. M.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Atomic force microscope and scanning tunneling microscope images of photoluminescent anodically etched porous silicon are presented and the development of the porous structure due to different etching stages is investigated. These measurements show that the vertical surface roughness increases with etching while the lateral dimensions remain almost constant, in agreement with known etching models. In addition, the results give strong evidence for an amorphous surface layer that partially covers the porous structure. Tunneling spectroscopy of porous silicon and unetched silicon are also presented. The surface density of states (DOS) measurements of porous silicon are compared with its photoluminescence spectrum. The DOS measurements do not show a peak corresponding to the 1.8 eV photoluminescent peak energy nor do they show an increase in the band gap energy of porous silicon compared with crystalline silicon. However, these measurements do show that while the unetched silicon surface remains p type, the porous silicon surface behaves like an n-type material.

AB - Atomic force microscope and scanning tunneling microscope images of photoluminescent anodically etched porous silicon are presented and the development of the porous structure due to different etching stages is investigated. These measurements show that the vertical surface roughness increases with etching while the lateral dimensions remain almost constant, in agreement with known etching models. In addition, the results give strong evidence for an amorphous surface layer that partially covers the porous structure. Tunneling spectroscopy of porous silicon and unetched silicon are also presented. The surface density of states (DOS) measurements of porous silicon are compared with its photoluminescence spectrum. The DOS measurements do not show a peak corresponding to the 1.8 eV photoluminescent peak energy nor do they show an increase in the band gap energy of porous silicon compared with crystalline silicon. However, these measurements do show that while the unetched silicon surface remains p type, the porous silicon surface behaves like an n-type material.

UR - http://www.scopus.com/inward/record.url?scp=0001243554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001243554&partnerID=8YFLogxK

U2 - 10.1063/1.108138

DO - 10.1063/1.108138

M3 - Article

VL - 61

SP - 2595

EP - 2597

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -