R.F. plasma CVD of diamond from oxygen containing gases

D. E. Meyer, T. B. Kustka, R. O. Dillon, John A Woollam

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH4/O2 in H2, CO in H2’ and CH4/CO2 in H2 plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to O atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:O ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.

Original languageEnglish (US)
Pages (from-to)21-27
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1146
DOIs
StatePublished - Jan 15 1990

Fingerprint

Plasma CVD
Diamond
Strombus or kite or diamond
Oxygen
Diamonds
Diamond deposits
Plasma
Gases
diamonds
vapor deposition
Atoms
Quartz
Inductively coupled plasma
oxygen
Silicon
Carbon Monoxide
gases
Hydrogen
atoms
Carbon

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

R.F. plasma CVD of diamond from oxygen containing gases. / Meyer, D. E.; Kustka, T. B.; Dillon, R. O.; Woollam, John A.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 1146, 15.01.1990, p. 21-27.

Research output: Contribution to journalArticle

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