Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition

Hossein Rabiee Golgir, Yun Shen Zhou, Dawei Li, Kamran Keramatnejad, Wei Xiong, Mengmeng Wang, Li Jia Jiang, Xi Huang, Lan Jiang, Jean Francois Silvain, Yong Feng Lu

Research output: Contribution to journalArticle

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Abstract

The influence of exciting ammonia (NH3) molecular vibration in the growth of gallium nitride (GaN) was investigated by using an infrared laser-assisted metal organic chemical vapor deposition method. A wavelength tunable CO2 laser was used to selectively excite the individual vibrational modes. Resonantly exciting the NH-wagging mode (v2) of NH3 molecules at 9.219 μm led to a GaN growth rate of 84 μm/h, which is much higher than the reported results. The difference between the resonantly excited and conventional thermally populated vibrational states was studied via resonant and nonresonant vibrational excitations of NH3 molecules. Resonant excitation of various vibrational modes was achieved at 9.219, 10.35, and 10.719 μm, respectively. Nonresonant excitation was conducted at 9.201 and 10.591 μm, similar to conventional thermal heating. Compared to nonresonant excitation, resonant excitation noticeably promotes the GaN growth rate and crystalline quality. The full width at half maximum value of the XRD rocking curves of the GaN (0002) and GaN (10-12) diffraction peaks decreased at resonant depositions and reached its minimum value of 45 and 53 arcmin, respectively, at the laser wavelength of 9.219 μm. According to the optical emission spectroscopic studies, resonantly exciting the NH3 v2 mode leads to NH3 decomposition at room temperature, reduces the formation of the TMGa:NH3 adduct, promotes the supply of active species in GaN formation, and, therefore, results in the increased GaN growth rate.

Original languageEnglish (US)
Article number105303
JournalJournal of Applied Physics
Volume120
Issue number10
DOIs
StatePublished - Sep 14 2016

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gallium nitrides
metalorganic chemical vapor deposition
ammonia
excitation
lasers
molecules
vibration mode
tunable lasers
wavelengths
vibrational states
infrared lasers
adducts
light emission
decomposition
vibration
heating
room temperature
curves
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition. / Golgir, Hossein Rabiee; Zhou, Yun Shen; Li, Dawei; Keramatnejad, Kamran; Xiong, Wei; Wang, Mengmeng; Jiang, Li Jia; Huang, Xi; Jiang, Lan; Silvain, Jean Francois; Lu, Yong Feng.

In: Journal of Applied Physics, Vol. 120, No. 10, 105303, 14.09.2016.

Research output: Contribution to journalArticle

Golgir, Hossein Rabiee ; Zhou, Yun Shen ; Li, Dawei ; Keramatnejad, Kamran ; Xiong, Wei ; Wang, Mengmeng ; Jiang, Li Jia ; Huang, Xi ; Jiang, Lan ; Silvain, Jean Francois ; Lu, Yong Feng. / Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition. In: Journal of Applied Physics. 2016 ; Vol. 120, No. 10.
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abstract = "The influence of exciting ammonia (NH3) molecular vibration in the growth of gallium nitride (GaN) was investigated by using an infrared laser-assisted metal organic chemical vapor deposition method. A wavelength tunable CO2 laser was used to selectively excite the individual vibrational modes. Resonantly exciting the NH-wagging mode (v2) of NH3 molecules at 9.219 μm led to a GaN growth rate of 84 μm/h, which is much higher than the reported results. The difference between the resonantly excited and conventional thermally populated vibrational states was studied via resonant and nonresonant vibrational excitations of NH3 molecules. Resonant excitation of various vibrational modes was achieved at 9.219, 10.35, and 10.719 μm, respectively. Nonresonant excitation was conducted at 9.201 and 10.591 μm, similar to conventional thermal heating. Compared to nonresonant excitation, resonant excitation noticeably promotes the GaN growth rate and crystalline quality. The full width at half maximum value of the XRD rocking curves of the GaN (0002) and GaN (10-12) diffraction peaks decreased at resonant depositions and reached its minimum value of 45 and 53 arcmin, respectively, at the laser wavelength of 9.219 μm. According to the optical emission spectroscopic studies, resonantly exciting the NH3 v2 mode leads to NH3 decomposition at room temperature, reduces the formation of the TMGa:NH3 adduct, promotes the supply of active species in GaN formation, and, therefore, results in the increased GaN growth rate.",
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AU - Keramatnejad, Kamran

AU - Xiong, Wei

AU - Wang, Mengmeng

AU - Jiang, Li Jia

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