Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, M. Schubert

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The lattice parameters of as-grown hydride vapor phase epitaxy GaN layers on sapphire, free-standing layers after the substrate lift-off, and homoepitaxial layers grown on the free-standing layers are measured. The in-plane and out-of-plane strains are calculated. It is found that the substrate removal leads to strain relaxation in the crack-free GaN free-standing layers to a certain extent. A small increase of the strain in the GaN homoepitaxial layers compared to the free-standing layers is observed. Cathodoluminescence (CL) spectroscopy and imaging, photoluminescence (PL) and Raman measurements are used as complementary tools in the residual strain analysis.

Original languageEnglish (US)
Pages (from-to)516-522
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume195
Issue number3
DOIs
StatePublished - Feb 1 2003

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Strain relaxation
Vapor phase epitaxy
Cathodoluminescence
Aluminum Oxide
Substrates
Sapphire
Hydrides
Lattice constants
Photoluminescence
Spectroscopy
Cracks
Imaging techniques
plane strain
cathodoluminescence
vapor phase epitaxy
hydrides
lattice parameters
sapphire
cracks
photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers. / Darakchieva, V.; Paskova, T.; Paskov, P. P.; Monemar, B.; Ashkenov, N.; Schubert, M.

In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 3, 01.02.2003, p. 516-522.

Research output: Contribution to journalArticle

Darakchieva, V. ; Paskova, T. ; Paskov, P. P. ; Monemar, B. ; Ashkenov, N. ; Schubert, M. / Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 195, No. 3. pp. 516-522.
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