Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.

Michael Randle, Alexey Lipatov, Avinash Kumar, Peter A. Dowben, Alexander Sinitskii, Uttam Singisetti, Jonathan P. Bird

Research output: Contribution to journalReview article

Original languageEnglish (US)
Pages (from-to)8498-8500
Number of pages3
JournalACS Nano
Volume13
Issue number8
DOIs
StatePublished - Aug 27 2019

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Metal insulator transition
Field effect transistors
Nanowires
nanowires
field effect transistors
insulators
metals

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors. / Randle, Michael; Lipatov, Alexey; Kumar, Avinash; Dowben, Peter A.; Sinitskii, Alexander; Singisetti, Uttam; Bird, Jonathan P.

In: ACS Nano, Vol. 13, No. 8, 27.08.2019, p. 8498-8500.

Research output: Contribution to journalReview article

Randle, M, Lipatov, A, Kumar, A, Dowben, PA, Sinitskii, A, Singisetti, U & Bird, JP 2019, 'Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.', ACS Nano, vol. 13, no. 8, pp. 8498-8500. https://doi.org/10.1021/acsnano.9b06062
Randle, Michael ; Lipatov, Alexey ; Kumar, Avinash ; Dowben, Peter A. ; Sinitskii, Alexander ; Singisetti, Uttam ; Bird, Jonathan P. / Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors. In: ACS Nano. 2019 ; Vol. 13, No. 8. pp. 8498-8500.
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