Reduced dislocation density in Ge/Si epilayers

E. P. Kvam, Fereydoon Namavar

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Mismatched epilayers, for which the coherency strain has been relieved by misfit dislocation introduction, typically exhibit high epithreading dislocation densities. When the misfit is substantial, as for Ge or GaAs grown by molecular beam epitaxy onto (001) Si substrates, the density is regularly over 10 9 cm-2. We have grown Ge on Si (111) and (001) with epithreading dislocation densities in the 106 cm-2 range by use of chemical vapor deposition. This is because longer, and thus fewer, misfit dislocations appear for strain relief. Potential explanations for this are postulated. The most likely reason is that thermally activated dislocation glide is much faster at chemical vapor deposition growth temperatures.

Original languageEnglish (US)
Pages (from-to)2357-2359
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
StatePublished - Dec 1 1991

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vapor deposition
molecular beam epitaxy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduced dislocation density in Ge/Si epilayers. / Kvam, E. P.; Namavar, Fereydoon.

In: Applied Physics Letters, Vol. 58, No. 21, 01.12.1991, p. 2357-2359.

Research output: Contribution to journalArticle

Kvam, E. P. ; Namavar, Fereydoon. / Reduced dislocation density in Ge/Si epilayers. In: Applied Physics Letters. 1991 ; Vol. 58, No. 21. pp. 2357-2359.
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