Reduced dislocation density in Ge/Si epilayers

E. P. Kvam, F. Namavar

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Abstract

Mismatched epilayers, for which the coherency strain has been relieved by misfit dislocation introduction, typically exhibit high epithreading dislocation densities. When the misfit is substantial, as for Ge or GaAs grown by molecular beam epitaxy onto (001) Si substrates, the density is regularly over 10 9 cm-2. We have grown Ge on Si (111) and (001) with epithreading dislocation densities in the 106 cm-2 range by use of chemical vapor deposition. This is because longer, and thus fewer, misfit dislocations appear for strain relief. Potential explanations for this are postulated. The most likely reason is that thermally activated dislocation glide is much faster at chemical vapor deposition growth temperatures.

Original languageEnglish (US)
Pages (from-to)2357-2359
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number21
DOIs
Publication statusPublished - Dec 1 1991

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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