Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures

N. Ashkenov, Mathias Schubert, E. Twerdowski, H. V. Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, M. Grundmann

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Electrical and polarization hysteresis measurements on Pt-BaTiO 3-ZnO-Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offsets of hysteresis loops along the polarization axis with increasing sweeping voltage, time-dependent charging, and rectifying behavior are observed. A simple electrical circuitry can be used to model the observed hysteresis behavior, where the interface between the wurtzite-structure ZnO and the pervoskite-structure BaTiO3 is seen as the origin of a space charge accumulation region. Coupling between spontaneous wurtzite and switchable ferroelectric polarization is discussed.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalThin Solid Films
Volume486
Issue number1-2
DOIs
StatePublished - Aug 22 2005
Externally publishedYes

Fingerprint

Ferroelectric materials
capacitors
hysteresis
Polarization
Semiconductor materials
wurtzite
Hysteresis
polarization
thin films
Pulsed laser deposition
Hysteresis loops
holders
Electric space charge
pulsed laser deposition
charging
Heterojunctions
space charge
Vacuum
vacuum
Electric potential

Keywords

  • 112 Electrical properties and measurements
  • 143 Ferroelectric properties
  • 354 Oxides
  • 430 Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ashkenov, N., Schubert, M., Twerdowski, E., Wenckstern, H. V., Mbenkum, B. N., Hochmuth, H., ... Grundmann, M. (2005). Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures. Thin Solid Films, 486(1-2), 153-157. https://doi.org/10.1016/j.tsf.2004.11.226

Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures. / Ashkenov, N.; Schubert, Mathias; Twerdowski, E.; Wenckstern, H. V.; Mbenkum, B. N.; Hochmuth, H.; Lorenz, M.; Grill, W.; Grundmann, M.

In: Thin Solid Films, Vol. 486, No. 1-2, 22.08.2005, p. 153-157.

Research output: Contribution to journalArticle

Ashkenov, N, Schubert, M, Twerdowski, E, Wenckstern, HV, Mbenkum, BN, Hochmuth, H, Lorenz, M, Grill, W & Grundmann, M 2005, 'Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures', Thin Solid Films, vol. 486, no. 1-2, pp. 153-157. https://doi.org/10.1016/j.tsf.2004.11.226
Ashkenov, N. ; Schubert, Mathias ; Twerdowski, E. ; Wenckstern, H. V. ; Mbenkum, B. N. ; Hochmuth, H. ; Lorenz, M. ; Grill, W. ; Grundmann, M. / Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures. In: Thin Solid Films. 2005 ; Vol. 486, No. 1-2. pp. 153-157.
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