Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures

N. Ashkenov, M. Schubert, E. Twerdowski, H. V. Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, M. Grundmann

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28 Scopus citations

Abstract

Electrical and polarization hysteresis measurements on Pt-BaTiO 3-ZnO-Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offsets of hysteresis loops along the polarization axis with increasing sweeping voltage, time-dependent charging, and rectifying behavior are observed. A simple electrical circuitry can be used to model the observed hysteresis behavior, where the interface between the wurtzite-structure ZnO and the pervoskite-structure BaTiO3 is seen as the origin of a space charge accumulation region. Coupling between spontaneous wurtzite and switchable ferroelectric polarization is discussed.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalThin Solid Films
Volume486
Issue number1-2
DOIs
Publication statusPublished - Aug 22 2005

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Keywords

  • 112 Electrical properties and measurements
  • 143 Ferroelectric properties
  • 354 Oxides
  • 430 Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ashkenov, N., Schubert, M., Twerdowski, E., Wenckstern, H. V., Mbenkum, B. N., Hochmuth, H., ... Grundmann, M. (2005). Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures. Thin Solid Films, 486(1-2), 153-157. https://doi.org/10.1016/j.tsf.2004.11.226