Recrystallization behavior in chiral sculptured thin films from silicon

E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, G. Wagner

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Abstract

Chiral sculptured thin films, which contain amorphous silicon screws with a fiberlike fine structure, were grown by ion-beam-assisted glancing-angle deposition at room temperature. The thin films were postgrowth annealed in the temperature range from 400 to 1000°C. Raman spectroscopy and transmission electron microscopy investigations performed before and after sample annealing reveal a recrystallization of silicon at temperatures above 800°C, with a persistence of the chiral structure geometry and fine structure. The Raman results are further discussed in terms of quantum confinement and coexisting phase effects.

Original languageEnglish (US)
Article number016107
JournalJournal of Applied Physics
Volume100
Issue number1
DOIs
Publication statusPublished - Jul 28 2006

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Schubert, E., Fahlteich, J., Rauschenbach, B., Schubert, M., Lorenz, M., Grundmann, M., & Wagner, G. (2006). Recrystallization behavior in chiral sculptured thin films from silicon. Journal of Applied Physics, 100(1), [016107]. https://doi.org/10.1063/1.2207728