Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors

Xiaolu Yin, Yi Yang, Yen Fu Liu, Jiong Hua, Andrei Sokolov, Dan Ewing, Paul J. De Rego, Kaizhong Gao, Sy Hwang Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pTHz12 at 1 Hz and 190 fTHz12 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.

Original languageEnglish (US)
Title of host publicationSpintronics XII
EditorsHenri-Jean M. Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi, Henri Jaffres
PublisherSPIE
ISBN (Electronic)9781510628731
DOIs
StatePublished - Jan 1 2019
EventSpintronics XII 2019 - San Diego, United States
Duration: Aug 11 2019Aug 15 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11090
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSpintronics XII 2019
CountryUnited States
CitySan Diego
Period8/11/198/15/19

Fingerprint

Sensor
sensitivity
sensors
Sensors
Magnetic sensors
Tunnel junctions
Dissipate
Linear Response
Nanostructures
Tuning
Tunnel
tunnel junctions
Magnetic fields
ambient temperature
Low Frequency
Temperature
Magnetic Field
Voltage
tuning
Electric potential

Keywords

  • Magnetic flux concentrator
  • Magnetic nanostructure
  • Magnetic tunnel junction
  • Multilayer thin film
  • Tunneling magnetoresistive sensor
  • Uultra-high sensitivity
  • Wide dynamic range

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yin, X., Yang, Y., Liu, Y. F., Hua, J., Sokolov, A., Ewing, D., ... Liou, S. H. (2019). Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. In H-J. M. Drouhin, J-E. Wegrowe, M. Razeghi, & H. Jaffres (Eds.), Spintronics XII [110903H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11090). SPIE. https://doi.org/10.1117/12.2529569

Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. / Yin, Xiaolu; Yang, Yi; Liu, Yen Fu; Hua, Jiong; Sokolov, Andrei; Ewing, Dan; De Rego, Paul J.; Gao, Kaizhong; Liou, Sy Hwang.

Spintronics XII. ed. / Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffres. SPIE, 2019. 110903H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11090).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yin, X, Yang, Y, Liu, YF, Hua, J, Sokolov, A, Ewing, D, De Rego, PJ, Gao, K & Liou, SH 2019, Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. in H-JM Drouhin, J-E Wegrowe, M Razeghi & H Jaffres (eds), Spintronics XII., 110903H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11090, SPIE, Spintronics XII 2019, San Diego, United States, 8/11/19. https://doi.org/10.1117/12.2529569
Yin X, Yang Y, Liu YF, Hua J, Sokolov A, Ewing D et al. Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. In Drouhin H-JM, Wegrowe J-E, Razeghi M, Jaffres H, editors, Spintronics XII. SPIE. 2019. 110903H. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2529569
Yin, Xiaolu ; Yang, Yi ; Liu, Yen Fu ; Hua, Jiong ; Sokolov, Andrei ; Ewing, Dan ; De Rego, Paul J. ; Gao, Kaizhong ; Liou, Sy Hwang. / Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors. Spintronics XII. editor / Henri-Jean M. Drouhin ; Jean-Eric Wegrowe ; Manijeh Razeghi ; Henri Jaffres. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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