Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam, W. Xiong, M. Mahjouri-Samani, L. Fan, R. Raju, M. Mitchell, Y. Gao, B. Krishnan, Y. S. Zhou, L. Jiang, Y. F. Lu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.

Original languageEnglish (US)
Pages (from-to)3171-3176
Number of pages6
JournalCrystal Growth and Design
Volume13
Issue number7
DOIs
StatePublished - Jul 3 2013

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Organic Chemicals
Gallium nitride
gallium nitrides
Organic chemicals
Silicon
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Lasers
silicon
Substrates
lasers
Growth temperature
Crystallization
Raman scattering
seeds
Electron microscopes
electron microscopes
gallium nitride
Raman spectra

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. / Thirugnanam, P.; Xiong, W.; Mahjouri-Samani, M.; Fan, L.; Raju, R.; Mitchell, M.; Gao, Y.; Krishnan, B.; Zhou, Y. S.; Jiang, L.; Lu, Y. F.

In: Crystal Growth and Design, Vol. 13, No. 7, 03.07.2013, p. 3171-3176.

Research output: Contribution to journalArticle

Thirugnanam, P, Xiong, W, Mahjouri-Samani, M, Fan, L, Raju, R, Mitchell, M, Gao, Y, Krishnan, B, Zhou, YS, Jiang, L & Lu, YF 2013, 'Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition', Crystal Growth and Design, vol. 13, no. 7, pp. 3171-3176. https://doi.org/10.1021/cg400541e
Thirugnanam, P. ; Xiong, W. ; Mahjouri-Samani, M. ; Fan, L. ; Raju, R. ; Mitchell, M. ; Gao, Y. ; Krishnan, B. ; Zhou, Y. S. ; Jiang, L. ; Lu, Y. F. / Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. In: Crystal Growth and Design. 2013 ; Vol. 13, No. 7. pp. 3171-3176.
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AU - Mahjouri-Samani, M.

AU - Fan, L.

AU - Raju, R.

AU - Mitchell, M.

AU - Gao, Y.

AU - Krishnan, B.

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