Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition

Z. M. Ren, Yongfeng Lu, D. H.K. Ho, T. C. Chong, B. A. Cheong, S. I. Pang, J. P. Wang, K. Li

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Carbon nitride thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of graphite. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as the laser source for the ablation. Raman spectroscopy measurements were used to characterise the deposited thin films. The influences of substrate temperature and nitrogen ion beam energy on the electronic properties of the deposited thin films were studied. The suitable parameters of substrate temperature and ion energy were suggested given our deposition conditions and setup in order to obtain large graphite-like crystallite structures or to realize a high content of amorphous CNx. X-ray photoelectron spectroscopy (XPS) was also adopted to assist the characterisation and evaluation of the deposited CNx thin films.

Original languageEnglish (US)
Pages (from-to)4859-4862
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number8 B
StatePublished - Aug 15 1999

Fingerprint

nitrogen ions
Pulsed laser deposition
Ion beams
pulsed laser deposition
Raman spectroscopy
ion beams
Nitrogen
Thin films
Ions
Substrates
thin films
Graphite
graphite
Temperature
temperature
carbon nitrides
Carbon nitride
energy
Excimer lasers
Laser ablation

Keywords

  • Carbon nitride
  • Laser ablation
  • Raman spectroscopy
  • Thin films
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition. / Ren, Z. M.; Lu, Yongfeng; Ho, D. H.K.; Chong, T. C.; Cheong, B. A.; Pang, S. I.; Wang, J. P.; Li, K.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4859-4862.

Research output: Contribution to journalArticle

@article{6d5ad609304f4e60a413a7fd7ae68bea,
title = "Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition",
abstract = "Carbon nitride thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of graphite. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as the laser source for the ablation. Raman spectroscopy measurements were used to characterise the deposited thin films. The influences of substrate temperature and nitrogen ion beam energy on the electronic properties of the deposited thin films were studied. The suitable parameters of substrate temperature and ion energy were suggested given our deposition conditions and setup in order to obtain large graphite-like crystallite structures or to realize a high content of amorphous CNx. X-ray photoelectron spectroscopy (XPS) was also adopted to assist the characterisation and evaluation of the deposited CNx thin films.",
keywords = "Carbon nitride, Laser ablation, Raman spectroscopy, Thin films, XPS",
author = "Ren, {Z. M.} and Yongfeng Lu and Ho, {D. H.K.} and Chong, {T. C.} and Cheong, {B. A.} and Pang, {S. I.} and Wang, {J. P.} and K. Li",
year = "1999",
month = "8",
day = "15",
language = "English (US)",
volume = "38",
pages = "4859--4862",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 B",

}

TY - JOUR

T1 - Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition

AU - Ren, Z. M.

AU - Lu, Yongfeng

AU - Ho, D. H.K.

AU - Chong, T. C.

AU - Cheong, B. A.

AU - Pang, S. I.

AU - Wang, J. P.

AU - Li, K.

PY - 1999/8/15

Y1 - 1999/8/15

N2 - Carbon nitride thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of graphite. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as the laser source for the ablation. Raman spectroscopy measurements were used to characterise the deposited thin films. The influences of substrate temperature and nitrogen ion beam energy on the electronic properties of the deposited thin films were studied. The suitable parameters of substrate temperature and ion energy were suggested given our deposition conditions and setup in order to obtain large graphite-like crystallite structures or to realize a high content of amorphous CNx. X-ray photoelectron spectroscopy (XPS) was also adopted to assist the characterisation and evaluation of the deposited CNx thin films.

AB - Carbon nitride thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of graphite. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as the laser source for the ablation. Raman spectroscopy measurements were used to characterise the deposited thin films. The influences of substrate temperature and nitrogen ion beam energy on the electronic properties of the deposited thin films were studied. The suitable parameters of substrate temperature and ion energy were suggested given our deposition conditions and setup in order to obtain large graphite-like crystallite structures or to realize a high content of amorphous CNx. X-ray photoelectron spectroscopy (XPS) was also adopted to assist the characterisation and evaluation of the deposited CNx thin films.

KW - Carbon nitride

KW - Laser ablation

KW - Raman spectroscopy

KW - Thin films

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0033175328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033175328&partnerID=8YFLogxK

M3 - Article

VL - 38

SP - 4859

EP - 4862

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -