Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

Y. P. Zeng, Yongfeng Lu, Z. X. Shen, W. X. Sun, T. Yu, L. Liu, J. N. Zeng, B. J. Cho, C. H. Poon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Raman spectroscopy was used to investigate excimer laser annealing and thickness determination of amorphous silicon (a-Si) layers which are less than 20 nm thick. The a-Si layers were produced on silicon (Si) substrates using Si+ ion implantation with an energy of 10 keV and a dose of 1 × 1015 cm-2. Excimer laser annealing was applied to re-crystallize the a-Si layers. The dependence of re-crystallization on laser fluence was investigated using Raman spectroscopy. A threshold laser fluence of 0.4 J cm-2 was required to re-crystallize the a-Si layers. In Raman spectroscopy, the Raman intensity shows a periodical variation with a period of 90° as a function of the angle between the Si orientation and the laser polarization. Based on this phenomenon, a method to determine nanoscale a-Si film thickness was proposed in two ways. One way was carried out without sample rotation to determine the a-Si thickness provided that the reference c-Si and a-Si/c-Si samples are in the same crystal orientation. The other way was carried out with sample rotation to determine the a-Si thickness without knowing the crystal orientation beforehand.

Original languageEnglish (US)
Pages (from-to)658-662
Number of pages5
JournalNanotechnology
Volume15
Issue number5
DOIs
StatePublished - May 1 2004

Fingerprint

laser annealing
Excimer lasers
Amorphous silicon
excimer lasers
amorphous silicon
Raman spectroscopy
Annealing
Silicon
silicon
Crystal orientation
Lasers
fluence
lasers
silicon films
Ion implantation
crystals
Film thickness
ion implantation
film thickness
Polarization

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon. / Zeng, Y. P.; Lu, Yongfeng; Shen, Z. X.; Sun, W. X.; Yu, T.; Liu, L.; Zeng, J. N.; Cho, B. J.; Poon, C. H.

In: Nanotechnology, Vol. 15, No. 5, 01.05.2004, p. 658-662.

Research output: Contribution to journalArticle

Zeng, Y. P. ; Lu, Yongfeng ; Shen, Z. X. ; Sun, W. X. ; Yu, T. ; Liu, L. ; Zeng, J. N. ; Cho, B. J. ; Poon, C. H. / Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon. In: Nanotechnology. 2004 ; Vol. 15, No. 5. pp. 658-662.
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