Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition

C. H. Perry, Feng Lu, F. Namavar

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Room temperature Raman spectra are reported of Si1-xGex epitaxial layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.03-10 μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice relaxation factor. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed.

Original languageEnglish (US)
Pages (from-to)613-617
Number of pages5
JournalSolid State Communications
Volume88
Issue number8
DOIs
StatePublished - Nov 1993

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Epitaxial layers
Atmospheric pressure
Raman scattering
Chemical vapor deposition
atmospheric pressure
vapor deposition
Raman spectra
Epilayers
Substrates
Thick films
frequency shift
thick films
room temperature
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition. / Perry, C. H.; Lu, Feng; Namavar, F.

In: Solid State Communications, Vol. 88, No. 8, 11.1993, p. 613-617.

Research output: Contribution to journalArticle

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