Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz, M. Grundmann

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Abstract

A study to investigate the Raman Scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li is presented. Polarized micro-Raman measurements were formed to study the phonon modes of doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm-1 were observed for Fe, Sb, and Al doped films. It was observed that Li doped ZnO did not reveal additional modes.

Original languageEnglish (US)
Pages (from-to)1974-1976
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number10
DOIs
StatePublished - Sep 8 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bundesmann, C., Ashkenov, N., Schubert, M., Spemann, D., Butz, T., Kaidashev, E. M., Lorenz, M., & Grundmann, M. (2003). Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li. Applied Physics Letters, 83(10), 1974-1976. https://doi.org/10.1063/1.1609251