Radio-frequency plasma chemical vapor deposition growth of diamond

Duane E. Meyer, Rodney O. Dillon, John A Woollam

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

Original languageEnglish (US)
Pages (from-to)2325-2327
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - Jan 1 1989

Fingerprint

Diamond
Silicon
Chemical vapor deposition
Diamonds
radio frequencies
diamonds
vapor deposition
Plasmas
silicon
Hydrogen
Carbon
Niobium
Quartz
carbon
Stainless Steel
Diamond films
Methane
Substrates
hydrogen
Carbon Monoxide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Radio-frequency plasma chemical vapor deposition growth of diamond. / Meyer, Duane E.; Dillon, Rodney O.; Woollam, John A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 7, No. 3, 01.01.1989, p. 2325-2327.

Research output: Contribution to journalArticle

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