Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping

Binghai Yan, Gang Zhou, Xiao Cheng Zeng, Jian Wu, Bing Lin Gu, Wenhui Duan

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective pn doping in the thinner side of the tube wall in the spirit of modulation doping.

Original languageEnglish (US)
Article number103107
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
StatePublished - Sep 13 2007

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modulation doping
nanotubes
silicon
tubes
nonuniformity
optical spectrum
conduction bands
optical absorption
transistors
wave functions
valence
absorption spectra
conduction
impurities
causes
shift
electronics
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness : Implication to modulation doping. / Yan, Binghai; Zhou, Gang; Zeng, Xiao Cheng; Wu, Jian; Gu, Bing Lin; Duan, Wenhui.

In: Applied Physics Letters, Vol. 91, No. 10, 103107, 13.09.2007.

Research output: Contribution to journalArticle

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