Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se

Laura E. Slaymaker, Nathan M. Hoffman, Matthew A. Ingersoll, Matthew R. Jensen, Jiři Olejniček, Christopher L. Exstrom, Scott A. Darveau, Rodney J. Soukup, Natale J. Ianno, Amitabha Sarkar, Štěpán Kment

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.

Original languageEnglish (US)
Title of host publicationCompound Semiconductors for Energy Applications and Environmental Sustainability - 2011
Pages77-82
Number of pages6
DOIs
StatePublished - Jan 1 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1324
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

Fingerprint

Rapid thermal annealing
sprayers
ethylenediamine
high vacuum
annealing
Suspensions
Gases
Vacuum
Thin films
2-Propanol
Argon
Poisons
Selenium
Toluene
Propanol
thin films
selenium
gases
Powders
Lattice constants

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Slaymaker, L. E., Hoffman, N. M., Ingersoll, M. A., Jensen, M. R., Olejniček, J., Exstrom, C. L., ... Kment, Š. (2012). Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. In Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011 (pp. 77-82). (Materials Research Society Symposium Proceedings; Vol. 1324). https://doi.org/10.1557/opl.2011.1152

Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. / Slaymaker, Laura E.; Hoffman, Nathan M.; Ingersoll, Matthew A.; Jensen, Matthew R.; Olejniček, Jiři; Exstrom, Christopher L.; Darveau, Scott A.; Soukup, Rodney J.; Ianno, Natale J.; Sarkar, Amitabha; Kment, Štěpán.

Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. p. 77-82 (Materials Research Society Symposium Proceedings; Vol. 1324).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Slaymaker, LE, Hoffman, NM, Ingersoll, MA, Jensen, MR, Olejniček, J, Exstrom, CL, Darveau, SA, Soukup, RJ, Ianno, NJ, Sarkar, A & Kment, Š 2012, Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. in Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. Materials Research Society Symposium Proceedings, vol. 1324, pp. 77-82, 2011 MRS Spring Meeting, San Francisco, CA, United States, 4/25/11. https://doi.org/10.1557/opl.2011.1152
Slaymaker LE, Hoffman NM, Ingersoll MA, Jensen MR, Olejniček J, Exstrom CL et al. Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. In Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. p. 77-82. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2011.1152
Slaymaker, Laura E. ; Hoffman, Nathan M. ; Ingersoll, Matthew A. ; Jensen, Matthew R. ; Olejniček, Jiři ; Exstrom, Christopher L. ; Darveau, Scott A. ; Soukup, Rodney J. ; Ianno, Natale J. ; Sarkar, Amitabha ; Kment, Štěpán. / Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. pp. 77-82 (Materials Research Society Symposium Proceedings).
@inproceedings{b596e9747b2e44fe82cc8cbc93cb114e,
title = "Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se",
abstract = "Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based {"}nanoink{"} suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.",
author = "Slaymaker, {Laura E.} and Hoffman, {Nathan M.} and Ingersoll, {Matthew A.} and Jensen, {Matthew R.} and Jiři Olejniček and Exstrom, {Christopher L.} and Darveau, {Scott A.} and Soukup, {Rodney J.} and Ianno, {Natale J.} and Amitabha Sarkar and Štěp{\'a}n Kment",
year = "2012",
month = "1",
day = "1",
doi = "10.1557/opl.2011.1152",
language = "English (US)",
isbn = "9781605113012",
series = "Materials Research Society Symposium Proceedings",
pages = "77--82",
booktitle = "Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011",

}

TY - GEN

T1 - Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se

AU - Slaymaker, Laura E.

AU - Hoffman, Nathan M.

AU - Ingersoll, Matthew A.

AU - Jensen, Matthew R.

AU - Olejniček, Jiři

AU - Exstrom, Christopher L.

AU - Darveau, Scott A.

AU - Soukup, Rodney J.

AU - Ianno, Natale J.

AU - Sarkar, Amitabha

AU - Kment, Štěpán

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.

AB - Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.

UR - http://www.scopus.com/inward/record.url?scp=84055217129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84055217129&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1152

DO - 10.1557/opl.2011.1152

M3 - Conference contribution

AN - SCOPUS:84055217129

SN - 9781605113012

T3 - Materials Research Society Symposium Proceedings

SP - 77

EP - 82

BT - Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011

ER -