Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se

Laura E. Slaymaker, Nathan M. Hoffman, Matthew A. Ingersoll, Matthew R. Jensen, Jiři Olejniček, Chris Exstrom, Scott A Darveau, Rodney J. Soukup, Natale J. Ianno, Amitabha Sarkar, Štěpán Kment

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.

Original languageEnglish (US)
Title of host publicationCompound Semiconductors for Energy Applications and Environmental Sustainability - 2011
Pages77-82
Number of pages6
DOIs
StatePublished - Jan 1 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1324
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

Fingerprint

Rapid thermal annealing
sprayers
ethylenediamine
high vacuum
annealing
Suspensions
Gases
Vacuum
Thin films
2-Propanol
Argon
Poisons
Selenium
Toluene
Propanol
thin films
selenium
gases
Powders
Lattice constants

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Slaymaker, L. E., Hoffman, N. M., Ingersoll, M. A., Jensen, M. R., Olejniček, J., Exstrom, C., ... Kment, Š. (2012). Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. In Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011 (pp. 77-82). (Materials Research Society Symposium Proceedings; Vol. 1324). https://doi.org/10.1557/opl.2011.1152

Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. / Slaymaker, Laura E.; Hoffman, Nathan M.; Ingersoll, Matthew A.; Jensen, Matthew R.; Olejniček, Jiři; Exstrom, Chris; Darveau, Scott A; Soukup, Rodney J.; Ianno, Natale J.; Sarkar, Amitabha; Kment, Štěpán.

Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. p. 77-82 (Materials Research Society Symposium Proceedings; Vol. 1324).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Slaymaker, LE, Hoffman, NM, Ingersoll, MA, Jensen, MR, Olejniček, J, Exstrom, C, Darveau, SA, Soukup, RJ, Ianno, NJ, Sarkar, A & Kment, Š 2012, Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. in Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. Materials Research Society Symposium Proceedings, vol. 1324, pp. 77-82, 2011 MRS Spring Meeting, San Francisco, CA, United States, 4/25/11. https://doi.org/10.1557/opl.2011.1152
Slaymaker LE, Hoffman NM, Ingersoll MA, Jensen MR, Olejniček J, Exstrom C et al. Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. In Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. p. 77-82. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2011.1152
Slaymaker, Laura E. ; Hoffman, Nathan M. ; Ingersoll, Matthew A. ; Jensen, Matthew R. ; Olejniček, Jiři ; Exstrom, Chris ; Darveau, Scott A ; Soukup, Rodney J. ; Ianno, Natale J. ; Sarkar, Amitabha ; Kment, Štěpán. / Properties of CuIn 1-xGa xSe 2 films prepared by the rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2and Se. Compound Semiconductors for Energy Applications and Environmental Sustainability - 2011. 2012. pp. 77-82 (Materials Research Society Symposium Proceedings).
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AB - Many reported CuIn 1-xGa xSe 2 (CIGS) thin films for high-efficiency solar cells have been prepared via a two-stage process that consists of a high-vacuum film deposition step followed by selenization with excess H 2Se gas or Se vapor. Removing toxic gas and high-vacuum requirements from this process would greatly simplify it and make it less hazardous. We report the formation of CuIn 1-xGa xSe 2 (x = 0, 0.25, 0.50, 0.75, 1.0) thin films achieved by rapid thermal annealing of spray-deposited CuIn 1-xGa xS 2 and Se in the absence of an additional selenium source. To prepare the Se layer, commercial Se powder was dissolved by refluxing in ethylenediamine/2,2- dimethylimidizolidine. After cooling to room temperature, this mixture was combined with 2-propanol and the resulting colloidal Se suspension was sprayed by airbrush onto a heated glass substrate. The resulting film was coated with nanocrystalline CuIn 1-xGa xS 2 via spray deposition of a toluene-based "nanoink" suspension. The two-layer sample was annealed at 550°C in an argon atmosphere for 60 minutes to form the final CIGS product. Scanning electron microscopy images reveal that film grains are 200-300 nm in diameter and comparable to sizes of the reactant CuIn 1-xGa xS 2 nanoparticles. XRD patterns are consistent with the chalcopyrite unit cell and calculated lattice parameters and A, phonon frequencies change nearly linearly between those for CuInSe 2 and CuGaSe 2.

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