Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphization

Debora Poon, Byung Jin Cho, Yong Feng Lu, Leng Seow Tan, Mousumi Bhat, Alex See

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

One of the major advantages of multiple-pulses Laser Thermal Annealing (LTA) with moderate energy fluence is that good dopant activation can be achieved without further increases in junction depth by successive pulses. It is demonstrated that when the laser fluence is adjusted to a value that can melt the preamorphization implantation (PAI) layer but not the underlying silicon substrate, PAI layer depths control the junction depths. Hence, it is desirable to operate LTA in this regime since this allows for a tighter process control as opposed to when the junction depth is controlled solely by the laser fluence. High Resolution Transmission Electron Microscopy (HR-TEM) micrographs show that the degree of damage repair depends on the amorphous layer thickness as well as the number of pulses. Our study allows for the evaluation of the maximum allowable PAI depth for a given number of pulses in order to fully remove the damage caused by the PAI.

Original languageEnglish (US)
Pages (from-to)229-234
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume765
StatePublished - Nov 24 2003
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 24 2003

Fingerprint

Germanium
Boron
laser annealing
Amorphization
Silicon
Laser pulses
germanium
boron
Annealing
implantation
optimization
Lasers
silicon
pulses
fluence
lasers
High resolution transmission electron microscopy
Process control
damage
Repair

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphization. / Poon, Debora; Cho, Byung Jin; Lu, Yong Feng; Tan, Leng Seow; Bhat, Mousumi; See, Alex.

In: Materials Research Society Symposium - Proceedings, Vol. 765, 24.11.2003, p. 229-234.

Research output: Contribution to journalConference article

@article{a821de84ce6f45b1acf9354103ebc157,
title = "Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphization",
abstract = "One of the major advantages of multiple-pulses Laser Thermal Annealing (LTA) with moderate energy fluence is that good dopant activation can be achieved without further increases in junction depth by successive pulses. It is demonstrated that when the laser fluence is adjusted to a value that can melt the preamorphization implantation (PAI) layer but not the underlying silicon substrate, PAI layer depths control the junction depths. Hence, it is desirable to operate LTA in this regime since this allows for a tighter process control as opposed to when the junction depth is controlled solely by the laser fluence. High Resolution Transmission Electron Microscopy (HR-TEM) micrographs show that the degree of damage repair depends on the amorphous layer thickness as well as the number of pulses. Our study allows for the evaluation of the maximum allowable PAI depth for a given number of pulses in order to fully remove the damage caused by the PAI.",
author = "Debora Poon and Cho, {Byung Jin} and Lu, {Yong Feng} and Tan, {Leng Seow} and Mousumi Bhat and Alex See",
year = "2003",
month = "11",
day = "24",
language = "English (US)",
volume = "765",
pages = "229--234",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphization

AU - Poon, Debora

AU - Cho, Byung Jin

AU - Lu, Yong Feng

AU - Tan, Leng Seow

AU - Bhat, Mousumi

AU - See, Alex

PY - 2003/11/24

Y1 - 2003/11/24

N2 - One of the major advantages of multiple-pulses Laser Thermal Annealing (LTA) with moderate energy fluence is that good dopant activation can be achieved without further increases in junction depth by successive pulses. It is demonstrated that when the laser fluence is adjusted to a value that can melt the preamorphization implantation (PAI) layer but not the underlying silicon substrate, PAI layer depths control the junction depths. Hence, it is desirable to operate LTA in this regime since this allows for a tighter process control as opposed to when the junction depth is controlled solely by the laser fluence. High Resolution Transmission Electron Microscopy (HR-TEM) micrographs show that the degree of damage repair depends on the amorphous layer thickness as well as the number of pulses. Our study allows for the evaluation of the maximum allowable PAI depth for a given number of pulses in order to fully remove the damage caused by the PAI.

AB - One of the major advantages of multiple-pulses Laser Thermal Annealing (LTA) with moderate energy fluence is that good dopant activation can be achieved without further increases in junction depth by successive pulses. It is demonstrated that when the laser fluence is adjusted to a value that can melt the preamorphization implantation (PAI) layer but not the underlying silicon substrate, PAI layer depths control the junction depths. Hence, it is desirable to operate LTA in this regime since this allows for a tighter process control as opposed to when the junction depth is controlled solely by the laser fluence. High Resolution Transmission Electron Microscopy (HR-TEM) micrographs show that the degree of damage repair depends on the amorphous layer thickness as well as the number of pulses. Our study allows for the evaluation of the maximum allowable PAI depth for a given number of pulses in order to fully remove the damage caused by the PAI.

UR - http://www.scopus.com/inward/record.url?scp=0242577305&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242577305&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0242577305

VL - 765

SP - 229

EP - 234

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -