Process monitoring and control of low temperature reactively sputtered A1N

Scott R. Kirkpatrick, Suzanne L. Rohde, Dorina M. Mihut, Mary L. Kurruppu, John R. Swanson, Dan Thomson, John A. Woollam

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this article we investigate the potential of controlling the sputtering of AlN using a combination of techniques such as target voltage analysis and ellipsometry. The growth processes for A1N are studied simultaneously at the target, as well as the substrate. Iterative optimization can be replaced almost entirely with in situ, real time process control/monitoring; reducing development time of a new process by more than an order of magnitude. To demonstrate this, A1N was reactively sputtered using an unbalanced magnetron onto 2024-A1, (100)Si, and stainless steel substrates and monitored by an in situ ellipsometer which indicated the index of refraction 'n' values of approximately 2.09-2.16 in the range 1.6-3 eV. Differing ion intensities were achieved by varying the bias on the substrate, and the effects were studied by X-ray diffraction, and profilometry. X-ray diffraction confirmed formation of hexagonal aluminum nitride with a preferred orientation of (001) by using a constant bias current substrate instead of a constant bias voltage. The profilometry tests indicated deposition rates of 38 nm/min. A detailed analysis of aluminum nitride formation with varying nitrogen flow was compared with the ellipsometric and target voltage versus nitrogen flow data to determine the optimal N2 flow rate. The sputtering rate of A1N was minimally 28% of the metal sputtering rate.

Original languageEnglish (US)
Pages (from-to)16-20
Number of pages5
JournalThin Solid Films
Volume332
Issue number1-2
DOIs
StatePublished - Nov 2 1998

Fingerprint

Process monitoring
Process control
Sputtering
Profilometry
Aluminum nitride
sputtering
aluminum nitrides
Substrates
electric potential
Nitrogen
nitrogen
X ray diffraction
Temperature
ellipsometers
Bias currents
Stainless Steel
Ellipsometry
Electric potential
Bias voltage
Deposition rates

Keywords

  • Ellipsometry
  • Low temperature reactively sputtered A1N
  • Target voltage analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kirkpatrick, S. R., Rohde, S. L., Mihut, D. M., Kurruppu, M. L., Swanson, J. R., Thomson, D., & Woollam, J. A. (1998). Process monitoring and control of low temperature reactively sputtered A1N. Thin Solid Films, 332(1-2), 16-20. https://doi.org/10.1016/S0040-6090(98)01020-7

Process monitoring and control of low temperature reactively sputtered A1N. / Kirkpatrick, Scott R.; Rohde, Suzanne L.; Mihut, Dorina M.; Kurruppu, Mary L.; Swanson, John R.; Thomson, Dan; Woollam, John A.

In: Thin Solid Films, Vol. 332, No. 1-2, 02.11.1998, p. 16-20.

Research output: Contribution to journalArticle

Kirkpatrick, SR, Rohde, SL, Mihut, DM, Kurruppu, ML, Swanson, JR, Thomson, D & Woollam, JA 1998, 'Process monitoring and control of low temperature reactively sputtered A1N', Thin Solid Films, vol. 332, no. 1-2, pp. 16-20. https://doi.org/10.1016/S0040-6090(98)01020-7
Kirkpatrick SR, Rohde SL, Mihut DM, Kurruppu ML, Swanson JR, Thomson D et al. Process monitoring and control of low temperature reactively sputtered A1N. Thin Solid Films. 1998 Nov 2;332(1-2):16-20. https://doi.org/10.1016/S0040-6090(98)01020-7
Kirkpatrick, Scott R. ; Rohde, Suzanne L. ; Mihut, Dorina M. ; Kurruppu, Mary L. ; Swanson, John R. ; Thomson, Dan ; Woollam, John A. / Process monitoring and control of low temperature reactively sputtered A1N. In: Thin Solid Films. 1998 ; Vol. 332, No. 1-2. pp. 16-20.
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