Preparation and characterization of ZnO nanorods, nanowalls, and nanochains

T. Premkumar, Yongfeng Lu, K. Baskar

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The vertically aligned zinc oxide (ZnO) nanorods were synthesized on silicon (Si) substrate using high-pressure pulsed laser deposition (HPPLD). The aligned ZnO nanorods were obtained at the substrate temperature of 650 °C, oxygen partial pressure of 7 Torr, and the target-substrate distance of 25 mm. The influence of substrate lattice mismatch including gallium nitride (GaN-2%), sapphire (Al2O3-18%), and Si (40%) on the growth of ZnO nanowalls was examined. The interlinked ZnO nanowalls were obtained on GaN substrate, whereas ZnO nanorods were obtained on Al2O3 and Si substrates. The magnesium (Mg) doping has influenced the morphological transition of ZnO from nanorods to nanochains. The chain-like structures were obtained for Mg-doped ZnO target. The growth mechanism has been proposed for the formation of ZnO nanorods, nanowalls, and nanochains. The strong (0002) peak and E2H mode confirmed that the ZnO nanorods, nanowalls, and nanochains are preferentially oriented along c-axis and have good crystalline quality. The near band edge emission (NBE) at 3.27 eV revealed the good optical properties of ZnO nanorods, nanowalls, and nanochains.

Original languageEnglish (US)
Title of host publicationZnO Nanocrystals and Allied Materials
EditorsM.S. Ramachandra Rao, Tatsuo Okada
Pages233-246
Number of pages14
DOIs
StatePublished - Jan 1 2014

Publication series

NameSpringer Series in Materials Science
Volume180
ISSN (Print)0933-033X

Fingerprint

Zinc Oxide
Zinc oxide
Nanorods
Silicon
Substrates
Magnesium
Gallium nitride
Lattice mismatch
Aluminum Oxide
Pulsed laser deposition
Sapphire
Partial pressure
Optical properties
Doping (additives)
Oxygen
Crystalline materials

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Premkumar, T., Lu, Y., & Baskar, K. (2014). Preparation and characterization of ZnO nanorods, nanowalls, and nanochains. In M. S. Ramachandra Rao, & T. Okada (Eds.), ZnO Nanocrystals and Allied Materials (pp. 233-246). (Springer Series in Materials Science; Vol. 180). https://doi.org/10.1007/978-81-322-1160-0_11

Preparation and characterization of ZnO nanorods, nanowalls, and nanochains. / Premkumar, T.; Lu, Yongfeng; Baskar, K.

ZnO Nanocrystals and Allied Materials. ed. / M.S. Ramachandra Rao; Tatsuo Okada. 2014. p. 233-246 (Springer Series in Materials Science; Vol. 180).

Research output: Chapter in Book/Report/Conference proceedingChapter

Premkumar, T, Lu, Y & Baskar, K 2014, Preparation and characterization of ZnO nanorods, nanowalls, and nanochains. in MS Ramachandra Rao & T Okada (eds), ZnO Nanocrystals and Allied Materials. Springer Series in Materials Science, vol. 180, pp. 233-246. https://doi.org/10.1007/978-81-322-1160-0_11
Premkumar T, Lu Y, Baskar K. Preparation and characterization of ZnO nanorods, nanowalls, and nanochains. In Ramachandra Rao MS, Okada T, editors, ZnO Nanocrystals and Allied Materials. 2014. p. 233-246. (Springer Series in Materials Science). https://doi.org/10.1007/978-81-322-1160-0_11
Premkumar, T. ; Lu, Yongfeng ; Baskar, K. / Preparation and characterization of ZnO nanorods, nanowalls, and nanochains. ZnO Nanocrystals and Allied Materials. editor / M.S. Ramachandra Rao ; Tatsuo Okada. 2014. pp. 233-246 (Springer Series in Materials Science).
@inbook{6c518b2be71d4e35bea7c7a0fa589414,
title = "Preparation and characterization of ZnO nanorods, nanowalls, and nanochains",
abstract = "The vertically aligned zinc oxide (ZnO) nanorods were synthesized on silicon (Si) substrate using high-pressure pulsed laser deposition (HPPLD). The aligned ZnO nanorods were obtained at the substrate temperature of 650 °C, oxygen partial pressure of 7 Torr, and the target-substrate distance of 25 mm. The influence of substrate lattice mismatch including gallium nitride (GaN-2{\%}), sapphire (Al2O3-18{\%}), and Si (40{\%}) on the growth of ZnO nanowalls was examined. The interlinked ZnO nanowalls were obtained on GaN substrate, whereas ZnO nanorods were obtained on Al2O3 and Si substrates. The magnesium (Mg) doping has influenced the morphological transition of ZnO from nanorods to nanochains. The chain-like structures were obtained for Mg-doped ZnO target. The growth mechanism has been proposed for the formation of ZnO nanorods, nanowalls, and nanochains. The strong (0002) peak and E2H mode confirmed that the ZnO nanorods, nanowalls, and nanochains are preferentially oriented along c-axis and have good crystalline quality. The near band edge emission (NBE) at 3.27 eV revealed the good optical properties of ZnO nanorods, nanowalls, and nanochains.",
author = "T. Premkumar and Yongfeng Lu and K. Baskar",
year = "2014",
month = "1",
day = "1",
doi = "10.1007/978-81-322-1160-0_11",
language = "English (US)",
isbn = "9788132211594",
series = "Springer Series in Materials Science",
pages = "233--246",
editor = "{Ramachandra Rao}, M.S. and Tatsuo Okada",
booktitle = "ZnO Nanocrystals and Allied Materials",

}

TY - CHAP

T1 - Preparation and characterization of ZnO nanorods, nanowalls, and nanochains

AU - Premkumar, T.

AU - Lu, Yongfeng

AU - Baskar, K.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The vertically aligned zinc oxide (ZnO) nanorods were synthesized on silicon (Si) substrate using high-pressure pulsed laser deposition (HPPLD). The aligned ZnO nanorods were obtained at the substrate temperature of 650 °C, oxygen partial pressure of 7 Torr, and the target-substrate distance of 25 mm. The influence of substrate lattice mismatch including gallium nitride (GaN-2%), sapphire (Al2O3-18%), and Si (40%) on the growth of ZnO nanowalls was examined. The interlinked ZnO nanowalls were obtained on GaN substrate, whereas ZnO nanorods were obtained on Al2O3 and Si substrates. The magnesium (Mg) doping has influenced the morphological transition of ZnO from nanorods to nanochains. The chain-like structures were obtained for Mg-doped ZnO target. The growth mechanism has been proposed for the formation of ZnO nanorods, nanowalls, and nanochains. The strong (0002) peak and E2H mode confirmed that the ZnO nanorods, nanowalls, and nanochains are preferentially oriented along c-axis and have good crystalline quality. The near band edge emission (NBE) at 3.27 eV revealed the good optical properties of ZnO nanorods, nanowalls, and nanochains.

AB - The vertically aligned zinc oxide (ZnO) nanorods were synthesized on silicon (Si) substrate using high-pressure pulsed laser deposition (HPPLD). The aligned ZnO nanorods were obtained at the substrate temperature of 650 °C, oxygen partial pressure of 7 Torr, and the target-substrate distance of 25 mm. The influence of substrate lattice mismatch including gallium nitride (GaN-2%), sapphire (Al2O3-18%), and Si (40%) on the growth of ZnO nanowalls was examined. The interlinked ZnO nanowalls were obtained on GaN substrate, whereas ZnO nanorods were obtained on Al2O3 and Si substrates. The magnesium (Mg) doping has influenced the morphological transition of ZnO from nanorods to nanochains. The chain-like structures were obtained for Mg-doped ZnO target. The growth mechanism has been proposed for the formation of ZnO nanorods, nanowalls, and nanochains. The strong (0002) peak and E2H mode confirmed that the ZnO nanorods, nanowalls, and nanochains are preferentially oriented along c-axis and have good crystalline quality. The near band edge emission (NBE) at 3.27 eV revealed the good optical properties of ZnO nanorods, nanowalls, and nanochains.

UR - http://www.scopus.com/inward/record.url?scp=84884274246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884274246&partnerID=8YFLogxK

U2 - 10.1007/978-81-322-1160-0_11

DO - 10.1007/978-81-322-1160-0_11

M3 - Chapter

SN - 9788132211594

T3 - Springer Series in Materials Science

SP - 233

EP - 246

BT - ZnO Nanocrystals and Allied Materials

A2 - Ramachandra Rao, M.S.

A2 - Okada, Tatsuo

ER -