Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

Tao Li, Pankaj Sharma, Alexey Lipatov, Hyungwoo Lee, Jung Woo Lee, Mikhail Y. Zhuravlev, Tula R. Paudel, Yuri A. Genenko, Chang Beom Eom, Evgeny Y. Tsymbal, Alexander Sinitskii, Alexei Gruverman

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Original languageEnglish (US)
Pages (from-to)922-927
Number of pages6
JournalNano Letters
Volume17
Issue number2
DOIs
StatePublished - Feb 8 2017

Fingerprint

polarization modulation
Tunnel junctions
tunnel junctions
Electronic properties
Transport properties
Ferroelectric materials
transport properties
Modulation
Polarization
Ferroelectric films
electronics
molybdenum disulfides
majority carriers
hybrid structures
electrodes
polarization
Semiconductor materials
stems
Ferroelectric thin films
Electrodes

Keywords

  • 2D materials
  • MoS
  • Resistive switching
  • ferroelectric tunnel junctions

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Li, T., Sharma, P., Lipatov, A., Lee, H., Lee, J. W., Zhuravlev, M. Y., ... Gruverman, A. (2017). Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. Nano Letters, 17(2), 922-927. https://doi.org/10.1021/acs.nanolett.6b04247

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. / Li, Tao; Sharma, Pankaj; Lipatov, Alexey; Lee, Hyungwoo; Lee, Jung Woo; Zhuravlev, Mikhail Y.; Paudel, Tula R.; Genenko, Yuri A.; Eom, Chang Beom; Tsymbal, Evgeny Y.; Sinitskii, Alexander; Gruverman, Alexei.

In: Nano Letters, Vol. 17, No. 2, 08.02.2017, p. 922-927.

Research output: Contribution to journalArticle

Li, T, Sharma, P, Lipatov, A, Lee, H, Lee, JW, Zhuravlev, MY, Paudel, TR, Genenko, YA, Eom, CB, Tsymbal, EY, Sinitskii, A & Gruverman, A 2017, 'Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions', Nano Letters, vol. 17, no. 2, pp. 922-927. https://doi.org/10.1021/acs.nanolett.6b04247
Li, Tao ; Sharma, Pankaj ; Lipatov, Alexey ; Lee, Hyungwoo ; Lee, Jung Woo ; Zhuravlev, Mikhail Y. ; Paudel, Tula R. ; Genenko, Yuri A. ; Eom, Chang Beom ; Tsymbal, Evgeny Y. ; Sinitskii, Alexander ; Gruverman, Alexei. / Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. In: Nano Letters. 2017 ; Vol. 17, No. 2. pp. 922-927.
@article{62ca394e0d3e494f959b70b8e0464d87,
title = "Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions",
abstract = "Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.",
keywords = "2D materials, MoS, Resistive switching, ferroelectric tunnel junctions",
author = "Tao Li and Pankaj Sharma and Alexey Lipatov and Hyungwoo Lee and Lee, {Jung Woo} and Zhuravlev, {Mikhail Y.} and Paudel, {Tula R.} and Genenko, {Yuri A.} and Eom, {Chang Beom} and Tsymbal, {Evgeny Y.} and Alexander Sinitskii and Alexei Gruverman",
year = "2017",
month = "2",
day = "8",
doi = "10.1021/acs.nanolett.6b04247",
language = "English (US)",
volume = "17",
pages = "922--927",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

AU - Li, Tao

AU - Sharma, Pankaj

AU - Lipatov, Alexey

AU - Lee, Hyungwoo

AU - Lee, Jung Woo

AU - Zhuravlev, Mikhail Y.

AU - Paudel, Tula R.

AU - Genenko, Yuri A.

AU - Eom, Chang Beom

AU - Tsymbal, Evgeny Y.

AU - Sinitskii, Alexander

AU - Gruverman, Alexei

PY - 2017/2/8

Y1 - 2017/2/8

N2 - Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

AB - Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

KW - 2D materials

KW - MoS

KW - Resistive switching

KW - ferroelectric tunnel junctions

UR - http://www.scopus.com/inward/record.url?scp=85012013368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85012013368&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.6b04247

DO - 10.1021/acs.nanolett.6b04247

M3 - Article

C2 - 28094991

AN - SCOPUS:85012013368

VL - 17

SP - 922

EP - 927

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -