Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors

Alexey Lipatov, Alexandra Fursina, Timothy H. Vo, Pankaj Sharma, Alexei Gruverman, Alexander Sinitskii

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Ferroelectric field-effect transistors (FeFETs) employing graphene on inorganic perovskite substrates receive considerable attention due to their interesting electronic and memory properties. They are known to exhibit an unusual hysteresis of electronic transport that is not consistent with the ferroelectric polarization hysteresis and is previously shown to be associated with charge trapping at graphene–ferroelectric interface. Here, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene–Pb(Zr,Ti)O3 FeFETs is demonstrated. Observation of the polarization-dependent conductivity hysteresis is important for the fundamental understanding of the interplay between the ferroelectric polarization and charge carriers in graphene. It is also important for practical memory applications because this hysteresis emulates the operation of nonvolatile memories and reveals the range of ON and OFF currents that can be achieved in long term data storage. It is demonstrated that this measurement scheme can be used to optimize the memory performance of graphene–PZT FeFETs that can exhibit nonvolatile time-independent ON/OFF ratios of over 5. The described measurement technique can potentially be used in the studies of kinetics of charge trap dissipation, polarization-dependent properties, and memory performance of FeFET devices comprising other 2D materials and various ferroelectric substrates.

Original languageEnglish (US)
Article number1700020
JournalAdvanced Electronic Materials
Volume3
Issue number7
DOIs
StatePublished - Jul 1 2017

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Field effect transistors
Graphene
Ferroelectric materials
Polarization
Hysteresis
Data storage equipment
Charge trapping
Substrates
Charge carriers
Perovskite
Kinetics

Keywords

  • ferroelectric memory
  • field-effect transistors
  • graphene
  • hysteresis
  • lead zirconate titanate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors. / Lipatov, Alexey; Fursina, Alexandra; Vo, Timothy H.; Sharma, Pankaj; Gruverman, Alexei; Sinitskii, Alexander.

In: Advanced Electronic Materials, Vol. 3, No. 7, 1700020, 01.07.2017.

Research output: Contribution to journalArticle

Lipatov, Alexey ; Fursina, Alexandra ; Vo, Timothy H. ; Sharma, Pankaj ; Gruverman, Alexei ; Sinitskii, Alexander. / Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors. In: Advanced Electronic Materials. 2017 ; Vol. 3, No. 7.
@article{0c01dbc187d9402b8c87b0f28c34e4e2,
title = "Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors",
abstract = "Ferroelectric field-effect transistors (FeFETs) employing graphene on inorganic perovskite substrates receive considerable attention due to their interesting electronic and memory properties. They are known to exhibit an unusual hysteresis of electronic transport that is not consistent with the ferroelectric polarization hysteresis and is previously shown to be associated with charge trapping at graphene–ferroelectric interface. Here, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene–Pb(Zr,Ti)O3 FeFETs is demonstrated. Observation of the polarization-dependent conductivity hysteresis is important for the fundamental understanding of the interplay between the ferroelectric polarization and charge carriers in graphene. It is also important for practical memory applications because this hysteresis emulates the operation of nonvolatile memories and reveals the range of ON and OFF currents that can be achieved in long term data storage. It is demonstrated that this measurement scheme can be used to optimize the memory performance of graphene–PZT FeFETs that can exhibit nonvolatile time-independent ON/OFF ratios of over 5. The described measurement technique can potentially be used in the studies of kinetics of charge trap dissipation, polarization-dependent properties, and memory performance of FeFET devices comprising other 2D materials and various ferroelectric substrates.",
keywords = "ferroelectric memory, field-effect transistors, graphene, hysteresis, lead zirconate titanate",
author = "Alexey Lipatov and Alexandra Fursina and Vo, {Timothy H.} and Pankaj Sharma and Alexei Gruverman and Alexander Sinitskii",
year = "2017",
month = "7",
day = "1",
doi = "10.1002/aelm.201700020",
language = "English (US)",
volume = "3",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "7",

}

TY - JOUR

T1 - Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors

AU - Lipatov, Alexey

AU - Fursina, Alexandra

AU - Vo, Timothy H.

AU - Sharma, Pankaj

AU - Gruverman, Alexei

AU - Sinitskii, Alexander

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Ferroelectric field-effect transistors (FeFETs) employing graphene on inorganic perovskite substrates receive considerable attention due to their interesting electronic and memory properties. They are known to exhibit an unusual hysteresis of electronic transport that is not consistent with the ferroelectric polarization hysteresis and is previously shown to be associated with charge trapping at graphene–ferroelectric interface. Here, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene–Pb(Zr,Ti)O3 FeFETs is demonstrated. Observation of the polarization-dependent conductivity hysteresis is important for the fundamental understanding of the interplay between the ferroelectric polarization and charge carriers in graphene. It is also important for practical memory applications because this hysteresis emulates the operation of nonvolatile memories and reveals the range of ON and OFF currents that can be achieved in long term data storage. It is demonstrated that this measurement scheme can be used to optimize the memory performance of graphene–PZT FeFETs that can exhibit nonvolatile time-independent ON/OFF ratios of over 5. The described measurement technique can potentially be used in the studies of kinetics of charge trap dissipation, polarization-dependent properties, and memory performance of FeFET devices comprising other 2D materials and various ferroelectric substrates.

AB - Ferroelectric field-effect transistors (FeFETs) employing graphene on inorganic perovskite substrates receive considerable attention due to their interesting electronic and memory properties. They are known to exhibit an unusual hysteresis of electronic transport that is not consistent with the ferroelectric polarization hysteresis and is previously shown to be associated with charge trapping at graphene–ferroelectric interface. Here, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene–Pb(Zr,Ti)O3 FeFETs is demonstrated. Observation of the polarization-dependent conductivity hysteresis is important for the fundamental understanding of the interplay between the ferroelectric polarization and charge carriers in graphene. It is also important for practical memory applications because this hysteresis emulates the operation of nonvolatile memories and reveals the range of ON and OFF currents that can be achieved in long term data storage. It is demonstrated that this measurement scheme can be used to optimize the memory performance of graphene–PZT FeFETs that can exhibit nonvolatile time-independent ON/OFF ratios of over 5. The described measurement technique can potentially be used in the studies of kinetics of charge trap dissipation, polarization-dependent properties, and memory performance of FeFET devices comprising other 2D materials and various ferroelectric substrates.

KW - ferroelectric memory

KW - field-effect transistors

KW - graphene

KW - hysteresis

KW - lead zirconate titanate

UR - http://www.scopus.com/inward/record.url?scp=85019109536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019109536&partnerID=8YFLogxK

U2 - 10.1002/aelm.201700020

DO - 10.1002/aelm.201700020

M3 - Article

AN - SCOPUS:85019109536

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 7

M1 - 1700020

ER -