Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hang Hu, Chunxiang Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, N. Yakovlev

Research output: Contribution to journalArticle

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Thin films of HfO2 high-k dielectric were fabricated using pulsed-laser deposition at various substrate temperatures and pressures. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were also investigated at various deposition temperatures. The results show that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Original languageEnglish (US)
Pages (from-to)551-557
Number of pages7
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - Jul 1 2003


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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