Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hang Hu, Chunxiang Zhu, Yongfeng Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, N. Yakovlev

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

Thin films of HfO2 high-k dielectric were fabricated using pulsed-laser deposition at various substrate temperatures and pressures. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were also investigated at various deposition temperatures. The results show that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Original languageEnglish (US)
Pages (from-to)551-557
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number1
DOIs
StatePublished - Jul 1 2003

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analog circuits
capacitors
insulators
metals
pulsed laser deposition
electrical properties
temperature
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications. / Hu, Hang; Zhu, Chunxiang; Lu, Yongfeng; Wu, Y. H.; Liew, T.; Li, M. F.; Cho, B. J.; Choi, W. K.; Yakovlev, N.

In: Journal of Applied Physics, Vol. 94, No. 1, 01.07.2003, p. 551-557.

Research output: Contribution to journalArticle

Hu, Hang ; Zhu, Chunxiang ; Lu, Yongfeng ; Wu, Y. H. ; Liew, T. ; Li, M. F. ; Cho, B. J. ; Choi, W. K. ; Yakovlev, N. / Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 1. pp. 551-557.
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