Photoluminescence spectra from porous silicon (111) microstructures: Temperature and magnetic-field effects

Clive H. Perry, Feng Lu, Fereydoon Namavar, Nader M. Kalkhoran, Richard A. Soref

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Abstract

Visible and near-infrared (IR) photoluminescence emission spectra (0.9-3.0 eV) from p-type porous Si(111) microstructures are reported as a function of temperature and magnetic field. The visible peak located at 1.84 eV at 4 K shifted to ∼1.56 eV at 575 K where it disappeared; the intensity reached a maximum value at ∼150 K. The photoluminescence spectrum showed no measurable shift in the peak position with magnetic field from 0 to 15 T. Strong IR intrinsic band-to-band emission above and below the bulk silicon band gap at ∼1.09 eV at 300 K was observed. This luminescence was found to be enhanced by two orders of magnitude or more over the IR spectrum from an unanodized wafer.

Original languageEnglish (US)
Pages (from-to)3117-3119
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number25
DOIs
StatePublished - Dec 1 1992

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porous silicon
temperature distribution
photoluminescence
microstructure
magnetic fields
emission spectra
infrared spectra
wafers
luminescence
shift
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Photoluminescence spectra from porous silicon (111) microstructures : Temperature and magnetic-field effects. / Perry, Clive H.; Lu, Feng; Namavar, Fereydoon; Kalkhoran, Nader M.; Soref, Richard A.

In: Applied Physics Letters, Vol. 60, No. 25, 01.12.1992, p. 3117-3119.

Research output: Contribution to journalArticle

Perry, Clive H. ; Lu, Feng ; Namavar, Fereydoon ; Kalkhoran, Nader M. ; Soref, Richard A. / Photoluminescence spectra from porous silicon (111) microstructures : Temperature and magnetic-field effects. In: Applied Physics Letters. 1992 ; Vol. 60, No. 25. pp. 3117-3119.
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AU - Soref, Richard A.

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