Photoluminescence properties of Er-doped porous silicon

U. Hommerich, X. Wu, F. Namavar, A. M. Cremins-Costa, K. L. Bray

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2 Scopus citations

Abstract

We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650 °C for 30 minutes. Room-temperature 1.54 μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Original languageEnglish (US)
Pages (from-to)215-220
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume405
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hommerich, U., Wu, X., Namavar, F., Cremins-Costa, A. M., & Bray, K. L. (1996). Photoluminescence properties of Er-doped porous silicon. Materials Research Society Symposium - Proceedings, 405, 215-220.