Photoluminescence from thin porous films of silicon carbide

V. P. Parkhutik, F. Namavar, E. Andrade

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.

Original languageEnglish (US)
Pages (from-to)229-232
Number of pages4
JournalThin Solid Films
Volume297
Issue number1-2
DOIs
StatePublished - Apr 1 1997

Fingerprint

Silicon carbide
silicon carbides
Photoluminescence
photoluminescence
Ethylene Glycol
Epitaxial films
Ethylene glycol
Luminescence
glycols
chemical composition
depletion
ethylene
Carbon
luminescence
Nanoparticles
Thin films
nanoparticles
carbon
Electric potential
electric potential

Keywords

  • Anodization
  • Photoluminescence
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Photoluminescence from thin porous films of silicon carbide. / Parkhutik, V. P.; Namavar, F.; Andrade, E.

In: Thin Solid Films, Vol. 297, No. 1-2, 01.04.1997, p. 229-232.

Research output: Contribution to journalArticle

Parkhutik, VP, Namavar, F & Andrade, E 1997, 'Photoluminescence from thin porous films of silicon carbide', Thin Solid Films, vol. 297, no. 1-2, pp. 229-232. https://doi.org/10.1016/S0040-6090(96)09422-9
Parkhutik, V. P. ; Namavar, F. ; Andrade, E. / Photoluminescence from thin porous films of silicon carbide. In: Thin Solid Films. 1997 ; Vol. 297, No. 1-2. pp. 229-232.
@article{4c211df783184f1882400251c11a5366,
title = "Photoluminescence from thin porous films of silicon carbide",
abstract = "Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.",
keywords = "Anodization, Photoluminescence, Silicon carbide",
author = "Parkhutik, {V. P.} and F. Namavar and E. Andrade",
year = "1997",
month = "4",
day = "1",
doi = "10.1016/S0040-6090(96)09422-9",
language = "English (US)",
volume = "297",
pages = "229--232",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Photoluminescence from thin porous films of silicon carbide

AU - Parkhutik, V. P.

AU - Namavar, F.

AU - Andrade, E.

PY - 1997/4/1

Y1 - 1997/4/1

N2 - Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.

AB - Luminescent porous films were obtained from amorphous epitaxial SiC thin films (200-600 nm) deposited on Si substrates using an electrochemical anodization in HF/ethylene glycol solution at high anodic voltages. Porous SiC films possess nearly the same chemical composition as a-SiC ones with slight depletion in carbon. Their photoluminescence peaks at 810 nm and achieves maximum intensity at 150-200K. The luminescence mechanism is thought to be due to Si nanoparticles crystallized in the SiC matrix during the anodization process.

KW - Anodization

KW - Photoluminescence

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0031121367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031121367&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(96)09422-9

DO - 10.1016/S0040-6090(96)09422-9

M3 - Article

AN - SCOPUS:0031121367

VL - 297

SP - 229

EP - 232

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -