Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser Deposition

X. Y. Chen, Yongfeng Lu, Y. H. Wu, B. J. Cho, W. D. Song, H. Hu

Research output: Contribution to journalConference article

Abstract

Si nanocrystals (NCs) consisting of small crystals from 1 to 20 nm were formed by pulsed-laser deposition (PLD) in inert Ar gas and reactive O 2 gas. The oxygen content of the Si NCs increases with increasing O 2 ambient pressure and nearly SiO 2 stoichiometry is obtained when O 2 pressure is higher than 100 mTorr. The optical absorption of the Si NCs shows an indirect band transition. Broad PL spectra are observed from Si NCs. The peak position and intensity of the PL band at 1.8-2.1 eV are dependent on excitation laser intensity, while intensity changes and blue shifts are observed after oxidation and annealing. The PL band at 2.55 eV displays vibronic structures with periodic spacing of 97 ± 9 meV, while no peak shift is found before and after oxidation and annealing. The as-deposited Si NCs show a polycrystal structure and crystallinity improves after annealing. Combined with the PL of Si NCs obtained by crumbling electrochemical-etched porous Si layer, the results give strong evidence that the PL band at 1.8-2.1 eV is due to the quantum confinement effect (QCE) in Si NC core while the PL band at 2.55 eV is related to the localized surface states at SiO x/Si interface.

Original languageEnglish (US)
Pages (from-to)145-150
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume770
StatePublished - Dec 1 2003
EventOptoelectronics of Group-IV-Based Materials - San Francisco, CA, United States
Duration: Apr 21 2003Apr 24 2003

Fingerprint

Silicon
Pulsed laser deposition
Nanocrystals
pulsed laser deposition
Photoluminescence
nanocrystals
photoluminescence
silicon
Annealing
annealing
Oxidation
oxidation
Laser excitation
Quantum confinement
shift
Polycrystals
Surface states
polycrystals
Inert gases
blue shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser Deposition. / Chen, X. Y.; Lu, Yongfeng; Wu, Y. H.; Cho, B. J.; Song, W. D.; Hu, H.

In: Materials Research Society Symposium - Proceedings, Vol. 770, 01.12.2003, p. 145-150.

Research output: Contribution to journalConference article

Chen, X. Y. ; Lu, Yongfeng ; Wu, Y. H. ; Cho, B. J. ; Song, W. D. ; Hu, H. / Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser Deposition. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 770. pp. 145-150.
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AB - Si nanocrystals (NCs) consisting of small crystals from 1 to 20 nm were formed by pulsed-laser deposition (PLD) in inert Ar gas and reactive O 2 gas. The oxygen content of the Si NCs increases with increasing O 2 ambient pressure and nearly SiO 2 stoichiometry is obtained when O 2 pressure is higher than 100 mTorr. The optical absorption of the Si NCs shows an indirect band transition. Broad PL spectra are observed from Si NCs. The peak position and intensity of the PL band at 1.8-2.1 eV are dependent on excitation laser intensity, while intensity changes and blue shifts are observed after oxidation and annealing. The PL band at 2.55 eV displays vibronic structures with periodic spacing of 97 ± 9 meV, while no peak shift is found before and after oxidation and annealing. The as-deposited Si NCs show a polycrystal structure and crystallinity improves after annealing. Combined with the PL of Si NCs obtained by crumbling electrochemical-etched porous Si layer, the results give strong evidence that the PL band at 1.8-2.1 eV is due to the quantum confinement effect (QCE) in Si NC core while the PL band at 2.55 eV is related to the localized surface states at SiO x/Si interface.

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