Photoellipsometry: a modulation spectroscopy method applied to n-type GaAs

Yi Ming Xiong, Paul G. Snyder, John A Woollam

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Photoellipsometry combines the structural sensitivity of spectroscopic ellipsometry with the built-in electric field sensitivity of photoreflectance, by measuring both the pseudodielectric function and the photomodulated pseudodielectric function. This allows simultaneous characterization of the built-in fields, and the structural parameters such as heterostructure layer thicknesses on which the fields partly depend. Results for bulk n-type GaAs are presented here. Lineshape analysis, similar to that for photoreflectance, yields the surface field and depletion width. The Schottky barrier height is also determined by analysis of the dependence on the pump beam intensity.

Original languageEnglish (US)
Pages (from-to)399-401
Number of pages3
JournalThin Solid Films
Volume234
Issue number1-2
DOIs
StatePublished - Oct 25 1993

Fingerprint

Modulation
Spectroscopy
modulation
Spectroscopic ellipsometry
spectroscopy
ellipsometry
Heterojunctions
depletion
Electric fields
Pumps
pumps
electric fields
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Photoellipsometry : a modulation spectroscopy method applied to n-type GaAs. / Xiong, Yi Ming; Snyder, Paul G.; Woollam, John A.

In: Thin Solid Films, Vol. 234, No. 1-2, 25.10.1993, p. 399-401.

Research output: Contribution to journalArticle

Xiong, Yi Ming ; Snyder, Paul G. ; Woollam, John A. / Photoellipsometry : a modulation spectroscopy method applied to n-type GaAs. In: Thin Solid Films. 1993 ; Vol. 234, No. 1-2. pp. 399-401.
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