Phonons and polaritons in semiconductor layer structures

Mathias Schubert, Tino Hofmann

Research output: Contribution to journalConference article

Abstract

This work presents a spectroscopic ellipsometry study of phonon and polariton modes in zincblende group-III-group-V semiconductor layer structures. Contributions to the dielectric function due to infrared-active polar phonon modes and coupled longitudinal-phonon-plasmon modes are differentiated and quantified upon model lineshape analysis. Interface Fano-, Brewster- and surface-guided modes are assigned upon solution of the surface polariton dispersion relation for layered structures, and addressed by experiment. We explain the physical origin of the Berreman-effect.

Original languageEnglish (US)
Pages (from-to)210-222
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5218
DOIs
StatePublished - Dec 1 2003
EventPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Complex Mediums IV: Beyond Linear Isotropic Dielectrics - San Diego, CA, United States
Duration: Aug 4 2003Aug 5 2003

Fingerprint

Phonons
Phonon
polaritons
Semiconductors
phonons
Semiconductor materials
Spectroscopic ellipsometry
Spectroscopic Ellipsometry
Plasmon
Dispersion Relation
Model Analysis
Infrared radiation
zincblende
Infrared
ellipsometry
Experiments
Experiment

Keywords

  • Ellipsometry
  • Infrared
  • Interface
  • Layered mediums
  • Polariton
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Phonons and polaritons in semiconductor layer structures. / Schubert, Mathias; Hofmann, Tino.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5218, 01.12.2003, p. 210-222.

Research output: Contribution to journalConference article

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