Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy

K. C. Agarwal, B. Daniel, T. Hofmann, Mathias Schubert, C. Klingshirn, M. Hetterich

Research output: Contribution to journalArticle

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Abstract

We present far-infrared (FIR) reflection studies for Zn 1-xMnxSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-xMnxSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.

Original languageEnglish (US)
Pages (from-to)914-918
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number4
DOIs
StatePublished - Mar 1 2006

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Epilayers
Molecular beam epitaxy
molecular beam epitaxy
Doping (additives)
Defects
infrared reflection
defects
red shift
free electrons
oscillators
Infrared radiation
Electrons
Temperature
temperature
Compensation and Redress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy. / Agarwal, K. C.; Daniel, B.; Hofmann, T.; Schubert, Mathias; Klingshirn, C.; Hetterich, M.

In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 4, 01.03.2006, p. 914-918.

Research output: Contribution to journalArticle

Agarwal, K. C. ; Daniel, B. ; Hofmann, T. ; Schubert, Mathias ; Klingshirn, C. ; Hetterich, M. / Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy. In: Physica Status Solidi (B) Basic Research. 2006 ; Vol. 243, No. 4. pp. 914-918.
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