Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy

K. C. Agarwal, B. Daniel, T. Hofmann, M. Schubert, C. Klingshirn, M. Hetterich

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Abstract

We present far-infrared (FIR) reflection studies for Zn 1-xMnxSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-xMnxSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.

Original languageEnglish (US)
Pages (from-to)914-918
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number4
DOIs
Publication statusPublished - Mar 1 2006

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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