Phonon modes of InxGa1-xAs1-yNy measured by far infrared spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, M. Schubert

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We study the phonon properties of compressively strained InxGa1-xAs1-yNy (x < 0.13, y < 0.03) single layers for wavenumbers from 100 to 600 cm-1 using far infrared spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy. The InGaAsN layers show a two-mode phonon behaviour in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs and GaN sublattice phonon modes at wavenumbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect can be used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f-dependence with results from high-resolution double-crystal X-ay diffractometry.

Original languageEnglish (US)
Pages (from-to)259-262
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
StatePublished - Nov 1 2001

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Spectroscopic ellipsometry
ellipsometry
Nitrogen
Infrared radiation
Lattice mismatch
Vapor phase epitaxy
Buffer layers
Indium
sublattices
Crystals
Substrates
nitrogen
Metals
Chemical analysis
vapor phase epitaxy
indium
buffers
gallium arsenide
high resolution
metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Phonon modes of InxGa1-xAs1-yNy measured by far infrared spectroscopic ellipsometry. / Leibiger, G.; Gottschalch, V.; Schubert, M.

In: Physica Status Solidi (B) Basic Research, Vol. 228, No. 1, 01.11.2001, p. 259-262.

Research output: Contribution to journalArticle

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N2 - We study the phonon properties of compressively strained InxGa1-xAs1-yNy (x < 0.13, y < 0.03) single layers for wavenumbers from 100 to 600 cm-1 using far infrared spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy. The InGaAsN layers show a two-mode phonon behaviour in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs and GaN sublattice phonon modes at wavenumbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect can be used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f-dependence with results from high-resolution double-crystal X-ay diffractometry.

AB - We study the phonon properties of compressively strained InxGa1-xAs1-yNy (x < 0.13, y < 0.03) single layers for wavenumbers from 100 to 600 cm-1 using far infrared spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy. The InGaAsN layers show a two-mode phonon behaviour in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs and GaN sublattice phonon modes at wavenumbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect can be used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f-dependence with results from high-resolution double-crystal X-ay diffractometry.

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