Phonon modes of GaNyP1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, A. Kasic, Mathias Schubert

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18 Citations (Scopus)

Abstract

Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1-y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse-and longitudinal-optical phonon frequencies of the GaP-and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1-y.

Original languageEnglish (US)
Pages (from-to)3407-3409
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number21
DOIs
StatePublished - Nov 19 2001

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ellipsometry
nitrogen
vapor phase epitaxy
line shape

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Phonon modes of GaNyP1-y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry. / Leibiger, G.; Gottschalch, V.; Kasic, A.; Schubert, Mathias.

In: Applied Physics Letters, Vol. 79, No. 21, 19.11.2001, p. 3407-3409.

Research output: Contribution to journalArticle

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