Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

X. Y. Chen, Y. F. Lu, B. J. Cho, Y. P. Zeng, J. N. Zeng, Y. H. Wu

Research output: Contribution to journalArticle

21 Scopus citations


Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects.

Original languageEnglish (US)
Pages (from-to)1344-1346
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 12 2002


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this