Ordered arrays of silicon pillars with controlled height and aspect ratio

Alexander Sinitskii, Stefan Neumeier, Jürgen Nelles, Monika Fischler, Ulrich Simon

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report the fabrication of ordered arrays of silicon pillars via a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). For NSL we used monolayers of silica particles self-assembled onto silicon substrates as masks for the deposition of hexagonal arrays of chromium nanoislands. By changing the amount of the deposited metal we fabricated arrays of nanoislands with different size and spacing. By using these arrays as masks for RIE, silicon pillars with different height (up to 1100 nm) and aspect ratio (up to 12:1) could be obtained.

Original languageEnglish (US)
Article number305307
JournalNanotechnology
Volume18
Issue number30
DOIs
StatePublished - Aug 8 2007

Fingerprint

Silicon
Aspect ratio
Nanospheres
Reactive ion etching
Lithography
Masks
Chromium
Silicon Dioxide
Monolayers
Metals
Silica
Fabrication
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Ordered arrays of silicon pillars with controlled height and aspect ratio. / Sinitskii, Alexander; Neumeier, Stefan; Nelles, Jürgen; Fischler, Monika; Simon, Ulrich.

In: Nanotechnology, Vol. 18, No. 30, 305307, 08.08.2007.

Research output: Contribution to journalArticle

Sinitskii, Alexander ; Neumeier, Stefan ; Nelles, Jürgen ; Fischler, Monika ; Simon, Ulrich. / Ordered arrays of silicon pillars with controlled height and aspect ratio. In: Nanotechnology. 2007 ; Vol. 18, No. 30.
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