Optoelectronic applications of porous polycrystalline silicon

Nader M. Kalkhoran, Fereydoon Namavar, H. Paul Maruska

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We report visible light emission from porous structures formed in bulk and thin-film polycrystalline silicon materials by anodic etching in an HF:ethanol solution. Our results indicate photoluminescence (PL) peaks at wavelengths between 650 and 655 nm and with intensities comparable to those typically obtained from porous samples of single-crystal silicon. The analyses of the surface morphology of porous polycrystalline silicon (PPSI) layers suggest that the etch rate could be preferentially greater at the grain boundaries. We have illuminated PPSI films formed on quartz substrates from both the front and rear of the samples and have measured PL emission from the same corresponding sides. Luminescent polycrystalline silicon films offer the possibility of integrating a novel Si-based flat-panel display along with the recently developed thin-film transistor (TFT) driver circuitry on a glass substrate. In addition, nanostructures originating from polycrystalline silicon substrates may enable low-cost fabrication of highly efficient photovoltaic cells.

Original languageEnglish (US)
Pages (from-to)2661-2663
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number19
DOIs
StatePublished - Dec 1 1993

Fingerprint

porous silicon
silicon films
silicon
photoluminescence
flat panel displays
photovoltaic cells
thin films
light emission
ethyl alcohol
transistors
quartz
grain boundaries
etching
fabrication
glass
single crystals
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kalkhoran, N. M., Namavar, F., & Maruska, H. P. (1993). Optoelectronic applications of porous polycrystalline silicon. Applied Physics Letters, 63(19), 2661-2663. https://doi.org/10.1063/1.110412

Optoelectronic applications of porous polycrystalline silicon. / Kalkhoran, Nader M.; Namavar, Fereydoon; Maruska, H. Paul.

In: Applied Physics Letters, Vol. 63, No. 19, 01.12.1993, p. 2661-2663.

Research output: Contribution to journalArticle

Kalkhoran, NM, Namavar, F & Maruska, HP 1993, 'Optoelectronic applications of porous polycrystalline silicon', Applied Physics Letters, vol. 63, no. 19, pp. 2661-2663. https://doi.org/10.1063/1.110412
Kalkhoran, Nader M. ; Namavar, Fereydoon ; Maruska, H. Paul. / Optoelectronic applications of porous polycrystalline silicon. In: Applied Physics Letters. 1993 ; Vol. 63, No. 19. pp. 2661-2663.
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