Optical waveguiding in Si/Si1-xGex/Si heterostructures

F. Namavar, R. A. Soref

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1-xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si 1-xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.

Original languageEnglish (US)
Pages (from-to)3370-3372
Number of pages3
JournalJournal of Applied Physics
Volume70
Issue number6
DOIs
Publication statusPublished - Dec 1 1991

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this